scholarly journals To reduce the passivation layer of Cu substrate by the ultrasonic assisted electrochemical potential activation method

2021 ◽  
Author(s):  
Zhong Zhao ◽  
Pengcheng Zhu
1989 ◽  
Vol 44 (11) ◽  
pp. 1421-1422 ◽  
Author(s):  
Michael D. Figueroa
Keyword(s):  

2019 ◽  
Author(s):  
Sina Chaeichian ◽  
Kaspar Schaerer ◽  
Ruairi O’Kane ◽  
Michael Halbasch

2013 ◽  
Vol 58 (2) ◽  
pp. 529-533 ◽  
Author(s):  
R. Koleňák ◽  
M. Martinkovič ◽  
M. Koleňáková

The work is devoted to the study of shear strength of soldered joints fabricated by use of high-temperature solders of types Bi-11Ag, Au-20Sn, Sn-5Sb, Zn-4Al, Pb-5Sn, and Pb-10Sn. The shear strength was determined on metallic substrates made of Cu, Ni, and Ag. The strength of joints fabricated by use of flux and that of joints fabricated by use of ultrasonic activation without flux was compared. The obtained results have shown that in case of soldering by use of ultrasound (UT), higher shear strength of soldered joints was achieved with most solders. The highest shear strength by use of UT was achieved with an Au-20Sn joint fabricated on copper, namely up to 195 MPa. The lowest average values were achieved with Pb-based solders (Pb-5Sn and Pb-10Sn). The shear strength values of these solders used on Cu substrate varied from 24 to 27 MPa. DSC analysis was performed to determine the melting interval of lead-free solders.


Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.


2014 ◽  
Vol 11 (5) ◽  
pp. 361-367 ◽  
Author(s):  
Mahgol Tajbakhsh ◽  
Yousef Ranjbar ◽  
Abdolhosein Masuodi ◽  
Parizad Rezaee ◽  
Mahmood Tajbakhsh ◽  
...  

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