Design of planar waveguide directional couplers with arbitrary modal electric field

We present the first unique design of a polarization-independent dual-wavelength splitter for wavelengths around 1.3 μm and 1.55 μm that is potentially of great interest to passive optical network (PON) applications. The filter design is simple compared with the other architectures and is based on ridge-type lateral directional couplers that can be readily integrated with other planar waveguide devices. Two design examples, based on InP/InGaAsP and Si/SiGe waveguides, are given. This polarization-independent wavelength splitting is achieved by exploiting the polarization dependence of the waveguides to produce coupling lengths that are sensitive to polarization and wavelength. We show that, to split the wavelengths without splitting the polarizations, the coupling lengths must be sufficiently different for TE and TM and for the different wavelengths in order to give the correct required ratios between the TE and TM coupling lengths for the two wavelengths of interest. We also show that the same approach can be applied to the design of a polarization splitter. The crosstalk, optical bandwidth, and fabrication sensitivity for the wavelength filter are evaluated.

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Direct writing of planar waveguide power splitters and directional couplers using a focused ultraviolet laser beam

Electronics Letters ◽

10.1049/el:19971138 ◽

1997 ◽

Vol 33 (20) ◽

pp. 1694 ◽

Cited By ~ 36

Author(s):

M. Svalgaard

Keyword(s):

Laser Beam ◽

Planar Waveguide ◽

Direct Writing ◽

Directional Couplers ◽

Ultraviolet Laser ◽

Power Splitters

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Resolution in photoelectron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100086593 ◽

1991 ◽

Vol 49 ◽

pp. 458-459

Author(s):

G. F. Rempfer

Keyword(s):

Electron Microscopy ◽

Electric Field ◽

Ultraviolet Light ◽

Uniform Field ◽

Virtual Image ◽

Lens System ◽

Photoemission Electron Microscopy ◽

Planar Electrode ◽

Electron Lens ◽

Photoemission Electron

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.

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Field-assisted ionization theory for microscopists

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171833 ◽

1994 ◽

Vol 52 ◽

pp. 820-821

Author(s):

Patrick P. Camus

Keyword(s):

Electric Field ◽

Electron Tunneling ◽

Ionization Probability ◽

Critical Distance ◽

Tunneling Probability ◽

Field Ionization ◽

Radius Of Curvature ◽

Field Evaporation ◽

A Value ◽

Ion Emission

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).

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