scholarly journals Static and dynamic modeling of organic thin film transistors: effect of channel length on the Mayer–Neldel rule energy and quasistatic capacitances

2018 ◽  
Vol 81 (3) ◽  
pp. 30202 ◽  
Author(s):  
Nawel Arfaoui ◽  
Walid Boukhili ◽  
Mounira Mahdouani ◽  
Joaquim Puigdollers ◽  
Ramzi Bourguiga
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Oxide Semiconductor ◽  
Organic Thin Film ◽  
Length Effect ◽  
Transmission Line Method ◽  
Effect Transistor ◽  
Overall Resistance ◽  
Channel Lengths

In this work, pentacene based thin film transistors (TFTs) with different channel lengths (L = 2.5, 5, 10 and 20 μm) have been fabricated and characterized electrically. Exploiting the electrical characteristics, we have analyzed the channel length effect on the key parameters of fabricated TFTs. We found that the performance of pentacene-TFTs was enormously enhanced by the reduction of channel length .We have also examined the influence of contact and channel resistances (RC and Rch) on the electrical proprieties of fabricated TFTs, using the transmission line method (TLM). Then, we have modeled the dependence of the total resistance RT on the gate voltage VG using the grain boundary trapping Meyer–Neldel rule (GBT-MNR) model and we have successfully reproduced, the output characteristic of pentacene TFTs using the overall resistance extracted from the GBT-MNR model. Finally, in order to investigate the channel length effect on the dynamic behavior of fabricated devices, we have reported a dynamic model based on the quasistatic assumptions which were used for metal-oxide-semiconductor field-effect transistor (MOSFET). Accordingly, we have presented a simple small-signal equivalent circuit to calculate theoretically the capacitances of pentacene-TFTs for different channel lengths.

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing

2011 ◽  
Vol 14 (8) ◽  
pp. H333 ◽  
Author(s):  
Minseok Kim ◽  
In-Kyu You ◽  
Hyun Han ◽  
Soon-Won Jung ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Offset Printing ◽  
Short Channel

scholarly journals Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor

CrystEngComm ◽  
2021 ◽  
Author(s):  
Tommaso Salzillo ◽  
Francesco D'Amico ◽  
Nieves Montes ◽  
Raphael Pfattner ◽  
Marta Mas-Torrent
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Polymer Binder ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.

Organic Thin-Film-Transistors with High on/off Ratios

1995 ◽  
Vol 377 ◽  
Author(s):  
L. Torsi ◽  
A. Dodabalapur ◽  
H. E. Katz ◽  
A. J. Lovinger ◽  
R. Ruel
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Switching Time ◽  
Channel Length ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Short Channel ◽  
Active Matrix ◽  
Current Voltage ◽  
Active Matrix Displays

ABSTRACTIn this article a new procedure to obtain alpha-hexathienylene (α-6T) thin-film-transistors (TFTs) with on/off ratios in excess of one million is reported. This procedure involves subjecting the TFTs to rapid thermal annealing. Previously, high on/off ratios have been achieved with improved device design and better chemical synthesis of α-6T oligomers. High on/off ratios, along with a switching time of ∼ 10 μs, render α-6T TFTs potential candidates as switching devices in active matrix displays. The experimental current-voltage (I-V) characteristics of oc-6T TFTs with channel length L = 4μm are also presented and a measured field effect mobility of 0.02 cm2/V-s is extracted from these characteristics using an analytical model which we have developed for short-channel α-6T TFTs.

Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes

2018 ◽  
Vol 52 ◽  
pp. 165-171 ◽  
Author(s):  
So Hyun Park ◽  
Jiye Kim ◽  
Seungyoung Lee ◽  
Dong Yun Lee ◽  
Sooman Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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