Some physical properties of a Li4Ti5O12 thin film electrode manufactured by radio frequency magnetron sputtering

2019 ◽  
Vol 87 (1) ◽  
pp. 10302
Author(s):  
Volkan Şenay ◽  
Soner Özen

A Li4Ti5O12 thin film was fabricated on an ITO layer previously prepared on a glass microscope slide via RF magnetron sputtering technique. The structural, morphological, optical and electrochemical properties of the produced thin film were studied by several techniques. According to the findings, the investigated film has a crystalline structure with small grains. Its surface is nano-structured, dense and smooth. The system (LTO/ITO/glass) exhibits an average transmittance rate above 70% in the visible region with a band gap energy value of 3.8 eV. The obtained impedance spectrum shows a good blocking behavior. The Warburg diffusion element with a value of 817 S.s1/2 provides easy Li-ion diffusion.

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.


2021 ◽  
Author(s):  
Sevda Sarıtaş ◽  
Tuba Çakıcı ◽  
Günay Merhan Muğlu ◽  
Muhammet Yıldırım

Abstract In this study, we, firstly, fabricated Fe 2 O 3 thin film recently promising to be used in spintronic technology by magnetron sputtering technique on ZnO thin film prepared by spray pyrolysis at 450 o C. The crystal structure, surface morphology and structure, chemical composition, optical and electronic properties, and electric properties of the Fe 2 O 3 /ZnO sample were performed by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM), energy-dispersive X-ray (EDX), ultraviolet-visible (UV-VIS) and Raman spectrometer, and Hall measurements, respectively. XRD measurements showed that Fe 2 O 3 and ZnO thin films have monoclinic and hexagonal crystal structures, respectively, and also both of them are polycrystalline. SEM images proved that there is a very good with the stoichiometric formation of ZnO nanocrystals of spherical shape and demonstrate aggregation of the particles and AFM images displays the distribution of flake-like of Fe 2 O 3 structure over the surface of ZnO. UV-VIS and Raman measurements revealed that the ZnO and Fe 2 O 3 /ZnO heterostructure band's band gap energy are 3.277 and 3.24 eV, respectively. Finally, the calculated values of electric conductivity, σ, electron density, n, and mobility of the electron, μ, using the data obtained from Hall measurements are 4.39x10 2 Ω -1 .m -1 , 6.88x10 21 m -3 and 3.99x10 -1 V -1 .m 2 . s, respectively.


2011 ◽  
Vol 415-417 ◽  
pp. 1871-1874
Author(s):  
Xiao Jing Wang ◽  
De Jun Li ◽  
Huan Qi Tao ◽  
Jun Wang

Aluminium doped ZnO (ZnO:Al) films were deposited on polymer substrates by RF magnetron sputtering. The effects of deposition temperatures on structure and properties of films were investigated by X-ray diffractometery, Scanning electronic microscopy, UV-visible spectrophotometer, as well as Four-point Probes System. The results revealed that moderate deposition temperature was helpful to improve the crystal quality and optoelectronic properties of ZnO:Al films. The lowest resistivity of 9.5×10-3Ω•cm and the average transmittance of 76% in the visible region was obtained for the film deposited from ZnO:2wt% Al2O3 target at 75°C.


2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.


2010 ◽  
Vol 123-125 ◽  
pp. 983-986 ◽  
Author(s):  
Chao Te Lee ◽  
Po Kai Chiu ◽  
C.N. Hsiao ◽  
C.L. Huang ◽  
Tao Lian Chuang ◽  
...  

WO3 thin film was prepared on glass substrate at room temperature by RF magnetron sputtering deposition with hybrid (Ar+2.5% H2) gas. Effects of RF power on the microstructure, electrical and optical properties of WO3 films are investigated by field emission scanning electron microscopy, X-ray diffraction, Hall measurement and spectrometer. X-ray diffraction analysis reveals that all of the films are amorphous. The minimum resistivity of the WO3 film prepared with RF 70W is 5.74 × 10-3 -cm. The average transmittance in the visible region was decreased with increased RF power from 50W to 150W. The average transmittance was lower than 15% with RF 50W. The electrical and optical mechanisms have been explained in terms of composition and film thickness were changed with RF power.


2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes

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