scholarly journals Crystallization of HfO2 thin films and their influence on laser induced damage

2020 ◽  
Vol 238 ◽  
pp. 12004
Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Ruggero Frison ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Laser Irradiation ◽  
Coated Sample ◽  
Two Dimensional ◽  
In Situ Xrd ◽  
Laser Induced Damage ◽  
Irradiation Resistance

We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

scholarly journals Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

2021 ◽  
Vol 17 (1) ◽  
Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Aurelio Borzi ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystallization Process ◽  
Ion Beam ◽  
Damage Threshold ◽  
High Activation ◽  
Quarter Wave ◽  
Dimensional Growth ◽  
Laser Induced Damage ◽  
Significant Increment

AbstractIn this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.

An In Situ XRD Technique For Annealing Investigations

1994 ◽  
Vol 38 ◽  
pp. 757-762
Author(s):  
D.E. Koylman ◽  
S.C. Axtel ◽  
B.W. Robertson
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Copper Powder ◽  
Diffraction Data ◽  
Particle Growth ◽  
Annealing Behavior ◽  
In Situ Xrd ◽  
Analysis Technique ◽  
Fourier Analysis Technique

Abstract An in situ XRD technique employing a diffractometer equipped with a high temperature camera was used to investigate the annealing behavior of nanoerystalline copper powder produced by mechanical milling. Specimens were annealed isothermally for 12 h at temperatures between 480 and 770 K. The diffraction data was analyzed using a single-profile Fourier analysis technique. The activation energy for diffracting particle growth was determined to be 0.45 eV/atom.

In Situ XRD Observation of Crystal Deformation of Piezoelectric (K,Na)NbO3 Thin Films

2020 ◽  
Vol 2 (7) ◽  
pp. 2084-2089
Author(s):  
Goon Tan ◽  
Sang Hyo Kweon ◽  
Kenji Shibata ◽  
Tomoaki Yamada ◽  
Isaku Kanno
Keyword(s):  
Thin Films ◽  
In Situ Xrd

scholarly journals Thermal stability of AlCoCrCuFeNi high entropy alloy thin films studied by in-situ XRD analysis

2010 ◽  
Vol 204 (12-13) ◽  
pp. 1989-1992 ◽  
Author(s):  
V. Dolique ◽  
A.-L. Thomann ◽  
P. Brault ◽  
Y. Tessier ◽  
P. Gillon
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Xrd Analysis ◽  
High Entropy Alloy ◽  
High Entropy ◽  
In Situ Xrd ◽  
Thermal Stability Of

Fabrication of High Quality Poly-Si From Fluorinated Precursors

1993 ◽  
Vol 297 ◽  
Author(s):  
Shin-Ichi Ishihara ◽  
Deyan He ◽  
Tetsuya Akasaka ◽  
Yuzoh Araki ◽  
Isamu Shimizu
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Conductivity ◽  
Thin Layer ◽  
Atomic Hydrogen ◽  
Solid Phase ◽  
Chemical Interaction ◽  
In Situ Observation ◽  
High Quality

Poly-Si thin films with grains 100–200 nm in dia. showing a highly ordered texture were grown from fluorinated precursors, SiFnHm (n+m=3), on a glass substrate at 300–400 °C with the aid of atomic hydrogen. According to the in situ observation by ellipsometry, the reconstruction was undergone in a solid phase stimulated by impinging atomic hydrogens within a thin layer of about 10 nm thick owing to the strong chemical interaction of the pair of H and F in Si-network. Both H and F were released efficiently from the network to the levels of 2 × 1020 cm−3 and (2−5) × 1019 cm−3, respectively. Dangling bonds were also efficiently passivated down to 4 × 1016 cm−3 with hydrogens diffused through the network. P-doped films showing electrical conductivity of 10−2 S/cm (300 °K) with the activation energy of 0.24 eV was obtained by alternately repeating the deposition of thin layer and the treatment with atomic hydrogens.

In-situ XRD study of alloyed Cu 2 ZnSnSe 4 –CuInSe 2 thin films for solar cells

2015 ◽  
Vol 582 ◽  
pp. 272-275 ◽  
Author(s):  
Stefan Hartnauer ◽  
Leonard A. Wägele ◽  
Enrico Jarzembowski ◽  
Roland Scheer
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
In Situ Xrd ◽  
Xrd Study

Structural Re-Organization Kinetics of Nanocrystalline Pt Films during In Situ Annealing

2012 ◽  
Vol 323-325 ◽  
pp. 149-154 ◽  
Author(s):  
Wolfgang Gruber ◽  
Sujoy Chakravarty ◽  
Carsten Baehtz ◽  
Harald Schmidt
Keyword(s):  
Activation Energy ◽  
Bragg Peak ◽  
Isothermal Annealing ◽  
Direct Proof ◽  
In Situ Xrd ◽  
Columnar Grains ◽  
Pt Films ◽  
Heating Up ◽  
Kinetics Of

In this work we investigated the structural re-organization of thin nanocrystalline Pt films in the temperature range between 250 °C and 400 °C by in-situ XRD, GIXRD and XRR synchrotron experiments. A re-orientation of (111) atomic planes and a relaxation of residual stress occurs. After heating up, Bragg peak fringes can be observed in the diffractograms. They are a direct proof that the Pt films are built of (111) columnar grains which essentially reach the whole film thickness of about 40 nm. During isothermal annealing a relaxation of the dispersion parameter of the atomic planes takes place which is associated with an activation energy of (0.4 ± 0.1) eV.

Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxidation Kinetics ◽  
Sol Gel ◽  
Tantalum Nitride ◽  
Sputtered Films ◽  
Parabolic Oxidation ◽  
Sol Gel Films ◽  
Kinetics Of

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

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