Structural Re-Organization Kinetics of Nanocrystalline Pt Films during In Situ Annealing

2012 ◽  
Vol 323-325 ◽  
pp. 149-154 ◽  
Author(s):  
Wolfgang Gruber ◽  
Sujoy Chakravarty ◽  
Carsten Baehtz ◽  
Harald Schmidt
Keyword(s):  
Activation Energy ◽  
Bragg Peak ◽  
Isothermal Annealing ◽  
Direct Proof ◽  
In Situ Xrd ◽  
Columnar Grains ◽  
Pt Films ◽  
Heating Up ◽  
Kinetics Of

In this work we investigated the structural re-organization of thin nanocrystalline Pt films in the temperature range between 250 °C and 400 °C by in-situ XRD, GIXRD and XRR synchrotron experiments. A re-orientation of (111) atomic planes and a relaxation of residual stress occurs. After heating up, Bragg peak fringes can be observed in the diffractograms. They are a direct proof that the Pt films are built of (111) columnar grains which essentially reach the whole film thickness of about 40 nm. During isothermal annealing a relaxation of the dispersion parameter of the atomic planes takes place which is associated with an activation energy of (0.4 ± 0.1) eV.

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

An In Situ XRD Technique For Annealing Investigations

1994 ◽  
Vol 38 ◽  
pp. 757-762
Author(s):  
D.E. Koylman ◽  
S.C. Axtel ◽  
B.W. Robertson
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Copper Powder ◽  
Diffraction Data ◽  
Particle Growth ◽  
Annealing Behavior ◽  
In Situ Xrd ◽  
Analysis Technique ◽  
Fourier Analysis Technique

Abstract An in situ XRD technique employing a diffractometer equipped with a high temperature camera was used to investigate the annealing behavior of nanoerystalline copper powder produced by mechanical milling. Specimens were annealed isothermally for 12 h at temperatures between 480 and 770 K. The diffraction data was analyzed using a single-profile Fourier analysis technique. The activation energy for diffracting particle growth was determined to be 0.45 eV/atom.

Nitridation Isothermal Kinetics of In Situ β-Sialon Bonded Al2O3-C Refractories

2016 ◽  
Vol 697 ◽  
pp. 572-575
Author(s):  
Xue Qing Yang ◽  
Nai Peng ◽  
Cheng Ji Deng
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Isothermal Kinetics ◽  
Nitridation Reaction ◽  
Result Show ◽  
Different Temperatures ◽  
Two Stages ◽  
Kinetics Of ◽  
And Diffusion

The kinetics of in-situ β- Sialon bonded Al2O3-C (SAC) refractories were investigated by TGA techniques via isothermal nitridation experiments at different temperatures. The result show that the nitridation process of in-situ β-Sialon bonded Al2O3-C refractories can be divided into two stages: the nitridation reaction rate controlling stage in the first 10 min, and the apparent activation energy of nitridation reaction is 370 kJ/mol ; then the reaction is controlled by both chemical reaction and diffusion rate in the following 110 min, the apparent activation energy of nitridation reaction is 410 kJ/mol.

In Situ Time-Resolved X-Ray Diffraction Investigation of the ω→ψ Transition in Al-Cu-Fe Quasicrystal-Forming Alloys

2007 ◽  
Vol 558-559 ◽  
pp. 943-947 ◽  
Author(s):  
E. Otterstein ◽  
R. Nicula ◽  
J. Bednarčík ◽  
M. Stir ◽  
E. Burkel
Keyword(s):  
Large Scale ◽  
Applied Pressure ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
In Situ Xrd ◽  
Kinetics Of

Quasicrystals are aperiodic long-range ordered solids with a high potential for many modern applications. Interest is nowadays paid to the development of economically viable large-scale synthesis procedures of quasicrystalline materials involving solid-state transformations. The kinetics of the high-temperature phase transition from the complex ω-phase to the icosahedral quasicrystalline (iQC) ψ-phase in AlCuFe nanopowders was here examined by in-situ time-resolved X-ray diffraction experiments using synchrotron radiation. In-situ XRD experiments will allow insight on the influence of uniaxial applied pressure on the kinetics of phase transitions leading to the formation of single-phase QC nanopowders and further contribute to the optimization of sintering procedures for nano-quasicrystalline AlCuFe alloy powders.

Kinetics of the Formation of PLZT: An In-Situ XRD Study

1996 ◽  
Vol 228-231 ◽  
pp. 417-422
Author(s):  
M.A. Roberts ◽  
G. Sankar ◽  
C. Richard A. Catlow ◽  
J.M. Thomas ◽  
G.N. Greaves ◽  
...  
Keyword(s):  
In Situ Xrd ◽  
Xrd Study ◽  
Kinetics Of

scholarly journals Crystallization of HfO2 thin films and their influence on laser induced damage

2020 ◽  
Vol 238 ◽  
pp. 12004
Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Ruggero Frison ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Laser Irradiation ◽  
Coated Sample ◽  
Two Dimensional ◽  
In Situ Xrd ◽  
Laser Induced Damage ◽  
Irradiation Resistance

We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.

Activation energy for Pt2Si and PtSi formation measured over a wide range of ramp rates

1995 ◽  
Vol 10 (8) ◽  
pp. 1953-1957 ◽  
Author(s):  
E.G. Colgan
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Phase Formation ◽  
Heating Rates ◽  
Sapphire Substrates ◽  
Conventional Furnace ◽  
Wide Range ◽  
High Heating ◽  
Pt Films

The activation energies, Ea's, for Pt2Si and PtSi formation were determined using in situ resistance measurements with ramp rates ranging from 0.4 °C/m to 100 °C/s. Measurements were performed using both conventional furnace and rapid thermal annealing (RTA). Pt films were evaporated on undoped polycrystalline Si and single-crystal Si on sapphire substrates. The Ea's determined from Kissinger plots were 1.63 ± 0.05 and 1.61 ± 0.06 eV for Pt2Si formation and 1.83 ± 0.06 and 1.83 ± 0.07 eV for PtSi formation with polycrystalline Si and silicon on sapphire substrates, respectively. These are the first reported measurements of Ea's for Pt2Si and PtSi formation over such a wide range of heating rates (greater than four orders of magnitude) and at such high heating rates. The phase formation sequence remained the same for the range of heating rates examined.

Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxidation Kinetics ◽  
Sol Gel ◽  
Tantalum Nitride ◽  
Sputtered Films ◽  
Parabolic Oxidation ◽  
Sol Gel Films ◽  
Kinetics Of

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

Evidence of a Correlation Between the Transition Temperature for Ordering and the Activation Energy for Ordering Kinetics in Ni75Al25-xFex Superalloys

1990 ◽  
Vol 205 ◽  
Author(s):  
R. Kozubski ◽  
J. Soltys ◽  
M.C. Cadeville ◽  
V. Pierron-Bohhes
Keyword(s):  
Activation Energy ◽  
Transition Temperature ◽  
Long Range ◽  
Theoretical Models ◽  
Considerable Effect ◽  
Ordering Kinetics ◽  
Current Value ◽  
Long Range Ordering ◽  
Kinetics Of

AbstractKinetics of long-range ordering was studied in the alloys Ni75Al25-xFex by means of in situ resistometry. The alloys under consideration exhibit a dramatic decrease of the "order-disorder" transition temperature Ttr with increasing X. After the existing theoretical models, the activation energy of long-range ordering should depend on one hand on the energy of ordering - related to Ttr -, and on the other hand, on the current value of the LRO degree. The performed measurements yield an experimental evidence of the above relationships. In addition, a considerable effect of magnetic order on LRO kinetics has also been registered. The results are qualitatively discussed in terms of the model of LRO kinetics in L12 structure proposed by Schoijet and Girifalco.

Reaction Rate Kinetics and Film Textures of Palladium Silicide Formed on Hydrogenated Amorphous Silicon

1993 ◽  
Vol 311 ◽  
Author(s):  
N. R. Manning ◽  
Haydn Chen ◽  
J. R. Abelson ◽  
L. H. Allen
Keyword(s):  
Reaction Rate ◽  
Isothermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Rate Kinetics ◽  
Palladium Silicide ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

ABSTRACTThe reaction rate kinetics of the thin film solid-state reaction between 120 nm of Pd and 100 or 300 nm of a-Si:H(18at%) to form Pd2Si were studied in situ using x-ray diffraction and four-point probe resistivity measurements during isothermal annealing. These two techniques yielded activation energies and prefactors of Ea=1. 36±:0.11 eV with ko=4.29 cm2/sec for the x-ray diffraction experiments; and Ea=0.97±0.22 eV with ko=3.42x10-4 cm2/sec for the resistivity measurements. The activation energy and prefactor obtained from the c-Si substrate of the resistivity measurements yielded Ea=l.41±0.31 eV and ko=10.6 cm2/sec. Comparisons showed that the silicide formed from the a-Si:H reacted approximately 1.4 times faster than the silicide formed from the c-Si in the same sample, but three times faster than silicide formed on pure c-Si(111). The crystalline texture and grain size of the metal and silicide films were examined.

Sign in / Sign up

Export Citation Format

Share Document