Two-dimensional (PEA)2PbBr4 perovskite single crystals for a high performance UV-detector

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

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High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

Nanoscale Advances ◽

10.1039/d1na00073j ◽

2021 ◽

Author(s):

Lixiang Han ◽

Mengmeng Yang ◽

Peiting Wen ◽

Wei Gao ◽

nengjie huo ◽

...

Keyword(s):

High Performance ◽

Van Der Waals ◽

Sharp Interface ◽

Two Dimensional ◽

High Quality ◽

One Dimensional ◽

Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

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Crystal Structure of Eu2PdSi3

Zeitschrift für Naturforschung B ◽

10.1515/znb-2003-1007 ◽

2003 ◽

Vol 58 (10) ◽

pp. 971-974 ◽

Cited By ~ 13

Author(s):

U. Ch. Rodewald ◽

R.-D. Hoffmann ◽

R. Pöttgen ◽

E.V. Sampathkumaran

Keyword(s):

Crystal Structure ◽

Single Crystal ◽

Single Crystals ◽

Two Dimensional ◽

Silica Tube ◽

Variable Parameters ◽

X Ray

Single crystals of Eu2PdSi3 were obtained from an arc-melted sample that was further annealed at 1020 K for seven days in a silica tube. The structure of Eu2PdSi3 was refined from single crystal X-ray diffractometer data: P6/mmm, a = 831.88(12), c = 435.88(9) pm, wR2 = 0.1175, 265 F2 values, and 13 variable parameters. It crystallizes with the U2RuSi3 structure, a superstructure of the AlB2 type. The palladium and silicon atoms form a planar two-dimensional [PdSi3] network. The two crystallographically different europium atoms have hexagonal prismatic coordinations Eu1Si12 and Eu2Pd4Si8. The Pd-Si and Si-Si distances within the [PdSi3] network are 244 and 236 pm, respectively.

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Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials

Inorganic Chemistry Frontiers ◽

10.1039/d0qi00923g ◽

2021 ◽

Vol 8 (1) ◽

pp. 182-200

Author(s):

Yanglizhi Li ◽

Luzhao Sun ◽

Haiyang Liu ◽

Yuechen Wang ◽

Zhongfan Liu

Keyword(s):

Single Crystal ◽

2D Materials ◽

Controlled Growth ◽

Two Dimensional ◽

High Quality ◽

Metal Substrates ◽

Recent Advances ◽

Two Dimensional Materials

Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.

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Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

MRS Proceedings ◽

10.1557/proc-144-613 ◽

1988 ◽

Vol 144 ◽

Author(s):

K. C. Garrison ◽

C. J. Palmstrøm ◽

R. A. Bartynski

Keyword(s):

Substrate Temperature ◽

Single Crystal ◽

Single Crystals ◽

Structural Quality ◽

High Quality ◽

Auger Analysis ◽

Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

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Use of Imaging Plates in X-Ray Analysis

Textures and Microstructures ◽

10.1155/tsm.29.89 ◽

1997 ◽

Vol 29 (1-2) ◽

pp. 89-101 ◽

Cited By ~ 6

Author(s):

M. Ermrich ◽

F. Hahn ◽

E. R. Wölfel

Keyword(s):

Single Crystal ◽

Single Crystals ◽

Powder Diffraction ◽

Polycrystalline Materials ◽

Imaging Plate ◽

Two Dimensional ◽

X Ray ◽

Working Principle ◽

Imaging Plates

Two-dimensional detectors have opened a new area for the investigation of both single crystals and polycrystalline materials. The working principle of Imaging Plates is described. Some characteristics and the advantages of an Imaging Plate are discussed using the STOE Imaging Plate Diffraction System for different kinds of X-ray analysis: (i) single crystal diffractometry, (ii) powder diffraction and (iii) stress and texture investigations.

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Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

Materials Science-Poland ◽

10.1515/msp-2016-0034 ◽

2016 ◽

Vol 34 (2) ◽

pp. 297-301 ◽

Cited By ~ 1

Author(s):

Dong Jin Kim ◽

Joon-Ho Oh ◽

Han Soo Kim ◽

Young Soo Kim ◽

Manhee Jeong ◽

...

Keyword(s):

Single Crystals ◽

High Performance ◽

Radiation Detector ◽

Radiation Detectors ◽

Middle Part ◽

High Quality ◽

Single Crystalline ◽

Crystalline Sample ◽

Vertical Bridgman ◽

Stockbarger Method

AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.

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Successive Magnetic Transitions on Single Crystal Cu3(OH)4SO4

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.170.194 ◽

2011 ◽

Vol 170 ◽

pp. 194-197

Author(s):

Shigeo Hara ◽

Hirohiko Sato

Keyword(s):

Magnetic Field ◽

Single Crystal ◽

Single Crystals ◽

Field Dependence ◽

Easy Axis ◽

The Other ◽

Magnetic Transitions ◽

Copper Hydroxide ◽

High Quality ◽

Measured Field

Cu3(OH)4SO4, a parallel Cu (S = 1/2) triple chain system, is an interesting magnet because an idle-spin state is expected on the central chain. We have succeeded in growing high-quality single crystals of Cu3SO4(OH)4 by a hydrothermal method from copper sulfate and copper hydroxide. We measured field dependence of the magnetization on a single crystal under various directions of magnetic field up to 7 T. We found a clear magnetic anisotropy and confirmed that the existence of the easy axis lies in the ac plane. Under magnetic fields parallel to the c-axis and the a-axis at 2.5 K, we observed field-induced successive magnetic transitions. In the case of B//c, two anomalies of the magnetization are observed at 0.9 and 1.7 T, On the other hand, there are broad anomalies in the magnetization at 3.7 and 5.6 T in the case of B//a.

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Ion-beam synthesis of epitaxial Au nanocrystals in MgO

Journal of Materials Research ◽

10.1557/jmr.2004.0174 ◽

2004 ◽

Vol 19 (5) ◽

pp. 1311-1314 ◽

Cited By ~ 1

Author(s):

S. Thevuthasan ◽

V. Shutthanandan ◽

C.M. Wang ◽

W.J. Weber ◽

W. Jiang ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Ion Beam ◽

Three Dimensional ◽

Subsequent Annealing ◽

Two Dimensional ◽

Epitaxial Relationship ◽

High Quality ◽

Au Nanoclusters ◽

Au Clusters

The formation of Au nanoclusters in MgO using ion implantation and subsequent annealing was investigated. Approximately 1200 and 1400 Au2+ ions/nm2 were implanted in MgO(100) substrates at 300 and 975 K, respectively. Subsequent annealing in air for 10 h at 1275 K promoted the formation of Au nanostructures in MgO. The sample implanted at 300 K showed severe radiation damage. In addition, two-dimensional plateletlike structures with possible composition of Au and MgO were formed during implantation in the sample that was implanted at 300 K. In contrast, Au implantation at 975 K promoted the nucleation of Au nanostructures during implantation. Subsequent annealing of both samples show three-dimensional clusters in MgO. However, the 975 K implanted sample shows clean, high-quality, single-crystal Au clusters that have an epitaxial relationship to MgO(100).

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SINGLE CRYSTAL GROWTH AND TEXTURING OF LEAD-BASED PIEZOELECTRIC CERAMICS VIA TEMPLATED GRAIN GROWTH PROCESS

Functional Materials Letters ◽

10.1142/s1793604708000204 ◽

2008 ◽

Vol 01 (02) ◽

pp. 127-132 ◽

Cited By ~ 6

Author(s):

THOMAS RICHTER ◽

CARSTEN SCHUH ◽

RALF MOOS ◽

ENDER SUVACI

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Single Crystals ◽

Grain Growth ◽

High Performance ◽

Piezoelectric Materials ◽

Secondary Recrystallization ◽

Single Crystal Growth ◽

Templated Grain Growth ◽

Textured Ceramics

In the field of high-performance piezoelectric materials, PMN-PT single crystals and textured ceramics have been attracting increased research interest for several years. On the other hand, the growth of single crystals from melt for PZT-based compositions is impossible due to its incongruent melting behavior. In order to obtain the characteristics of pure single crystal PZT as closely as possible, the PZT must be textured by secondary recrystallization of introduced seeds in a fine-grained matrix. Zirconium was therefore added to a PMN-PT-ceramic with 32 mol% PT ( Pb ( Mg 1/3 Nb 2/3)0.68 Ti 0.32 O 3) in order to obtain a PMN-PZT-ceramic with 37 mol% PT and 21 mol% PZ ( Pb ( Mg 1/3 Nb 2/3)0.42( Ti 0.638 Zr 0.362)0.58 O 3). Initially, the growth mechanism of (001)-oriented BaTiO 3 (BT) single crystals in those matrices was investigated. The piezoelectric single crystals were produced via a process that starts with the hot pressing of a BT single crystal in cold isostatically pressed ceramics, followed by an additional sintering step in order to achieve a secondary recrystallization. The measured growth lengths in PMN-PT and PMN-PZT matrices were up to 140 μm and 65 μm, respectively. Having developed this understanding, both ceramics were textured via the templated grain growth (TGG) process by using (001)-oriented BT templates. Sintering of templated grain bodies resulted in template growth into the matrix to produce textured ceramics with Lotgering factors up to 0.99 for both compositions. In textured samples unipolar strain s33 was enhanced by a factor of up to 1.8 compared to randomly oriented ceramics. By contrast, BT single crystal growth in an alternative PZT matrix with NdMn doping was not successful. Hence, in the present work, growth experiments in this NdMn -doped PZT were first performed using PZT fibers of similar composition as seeds. Growth of the fiber diameter of up to 100 μm was observed in that matrix.

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