Removal of boron from metallurgical grade silicon by CaO-SiO2 based slags

2019 ◽  
Vol 116 (4) ◽  
pp. 413
Author(s):  
Yong Hou ◽  
Yue-dong Wu ◽  
Guo-Hua Zhang ◽  
Kuo-Chih Chou
Keyword(s):  
Rare Earth ◽  
Partition Coefficient ◽  
Rare Earth Oxides ◽  
Molar Ratio ◽  
Mass Ratio ◽  
Metallurgical Grade Silicon ◽  
Slag Refining ◽  
Maximum Value ◽  
Grade Silicon ◽  
The Rare Earth

Slag refining is one of the most effective methods to remove boron from metallurgical grade silicon (MG-Si). In this paper, the removal of boron from metallurgical grade silicon was proposed by adding CaF2, BaO or rare earth oxides (La2O3 and CeO2) to CaO-SiO2 based slags. The effects of the BaO content, the CaF2 content, the rare earth oxides content, the molar ratio of CaO to SiO2 and the mass ratio of slag to silicon on the partition coefficient of boron (LB) between slag and silicon are investigated. The results show that LB has a maximum value of 5.17 in 45% CaO-45% SiO2-10% BaO slags at 1550 °C after reacting for 6 h with a slag to silicon mass ratio of 2. Besides, it is found that the addition of La2O3 or CeO2 shows better de-boronization ability compared with the addition of BaO.

Comparison between slag refining processes for B removal with metallurgical grade silicon and Si–Sn alloy

2018 ◽  
Vol 115 (3) ◽  
pp. 312 ◽  
Author(s):  
Rowaid Al-khazraji ◽  
Yaqiong Li ◽  
Lifeng Zhang
Keyword(s):  
Removal Efficiency ◽  
Acid Leaching ◽  
Experimental Results ◽  
Mass Ratio ◽  
Metallurgical Grade Silicon ◽  
Clear Effect ◽  
Slag Refining ◽  
Before And After ◽  
Grade Silicon ◽  
Refining Processes

Boron (B) removal by slag refining using CaO–SiO2–CaCl2 was investigated in metallurgical-grade silicon (MG-Si) and 75 wt% Si–Sn alloy. Experiments were conducted at 1500 °C for 15 min. The microstructure was characterized before and after refining. The effects of acid leaching, basicity, and slag/Si mass ratio on B removal were investigated. Experimental results showed that acid leaching had no effect on B removal from MG-Si but had a clear effect on the refined Si–Sn alloy after slag refining. The final B concentration was highly affected by the CaO/SiO2 mass ratio with minimum value, where the content of B was reduced from 18.36 ppmw to 5.5 ppmw at the CaO/SiO2 = 1.2 for MG-Si slag refining and from 18.36 ppmw to 3.7 ppmw at CaO/SiO2 = 1.5 for 75 wt% Si–Sn alloy. Increasing the slag mass ratio by 2:1 mass ratio also increased B removal efficiency by approximately 15–20% more than an increase by 1:1.

scholarly journals Removing boron from metallurgical grade silicon by a high basic slag refining technique

2014 ◽  
Vol 50 (1) ◽  
pp. 83-86 ◽  
Author(s):  
J.J. Wu ◽  
M. Xu ◽  
K.B. Liu ◽  
W.H. Ma ◽  
B. Yang ◽  
...  
Keyword(s):  
Distribution Coefficient ◽  
Boron Concentration ◽  
Basic Slag ◽  
Mass Ratio ◽  
Purification Method ◽  
Metallurgical Grade Silicon ◽  
Slag Refining ◽  
Thermodynamic Relationship ◽  
Grade Silicon ◽  
Maximal Distribution

A new purification method of removing boron from metallurgical grade silicon (MG-Si) using a high baisicity slag was developed in this paper. The typical impurities Al, Ca, Ti, B, P etc in MG-Si can be removed by the binary calcium sillicate slag and it is especially efficient for removing impurity Boron. It was found that the maximal distribution coefficient of boron between calcium sillicate slag and silicon reaches to 1.57 when the mass ratio of CaO/SiO2 was 1.5 and the composition was 60%CaO-40%SiO2. It showed that the oxidizability of calcium sillicate slag was affected and restricted by the basicity and the mass ratio of acid oxide SiO slag according to the thermodynamic relationship. The boron concentration in MG-Si can be reduced from 18x10-6 to 4.5x10-6 and 1.4x10-6, respectively, when using the ternary slags 40.5%CaO-49.5%SiO2-10%Li2O and 32CaO-38%SiO2-30%Li2O.

scholarly journals Boron removal from metallurgical grade silicon using a FeCl2 molten salt refining technique

2013 ◽  
Vol 49 (3) ◽  
pp. 257-261 ◽  
Author(s):  
B.J. Jia ◽  
J.J. Wu ◽  
W.H. Ma ◽  
B. Yang ◽  
D.C. Liu ◽  
...  
Keyword(s):  
Molten Salt ◽  
Boron Concentration ◽  
Metallurgical Process ◽  
Mass Ratio ◽  
Solar Grade Silicon ◽  
Boron Removal ◽  
Metallurgical Grade Silicon ◽  
Slag Refining ◽  
Grade Silicon ◽  
Refining Time

The slag refining for boron removal from metallurgical grade silicon is a promising metallurgical process for producing solar grade silicon. In this paper, FeCl2 molten salt has been used as a new refining agent to remove boron from MG-Si. The effects of refining time and mass ratio of MG-Si to FeCl2 molten salt on boron removal have been investigated in detail. The results showed that boron can be efficiently removed in form of BCl3 and boron concentration in MG-Si was successfully reduced from 22?10-6 to 4?10-6 at 1823K for 2 h with the mass ratio of FeCl2 molten salt to MG-Si for 1.0. The rate equation of boron removal using FeCl2 molten salt was proposed and established in kinetic, which showed a large difference in removal limitation of boron compared with thermodynamics.

Boron removal in purifying metallurgical grade silicon by CaO–SiO2 slag refining

2014 ◽  
Vol 24 (4) ◽  
pp. 1231-1236 ◽  
Author(s):  
Ji-jun WU ◽  
Yan-long LI ◽  
Wen-hui MA ◽  
Kui-xian WEI ◽  
Bin YANG ◽  
...  
Keyword(s):  
Boron Removal ◽  
Metallurgical Grade Silicon ◽  
Slag Refining ◽  
Grade Silicon

Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jesse S. Jur ◽  
Ginger D. Wheeler ◽  
Matthew T. Veety ◽  
Daniel J. Lichtenwalner ◽  
Douglas W. Barlage ◽  
...  
Keyword(s):  
Rare Earth ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Rare Earth Oxides ◽  
Oxide Semiconductor ◽  
Native Oxide ◽  
Enhancement Mode ◽  
Effect Transistor ◽  
The Rare Earth

ABSTRACTHigh-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSFET devices (ns > 4×1013 cm−2) offer significant performance advantages, such as greater efficiency and scalability, as compared to heterojunction field effect transistor (HFET) devices for use in high power and high frequency GaN-based devices. High leakage current and current collapse at high drive conditions suggests that the use of a high-κ insulating layer is principle for enhancement-mode MOSFET development. In this work, rare earth oxides (Sc, La, etc.) are explored due to their ideal combination of permittivity and high band gap energy. However, a substantial lattice mismatch (9-21%) between the rare earth oxides and the GaN substrate results in mid-gap defect state densities and growth dislocations. The epitaxial growth of the rare earth oxides by molecular beam epitaxy (MBE) on native oxide passivated-GaN is examined in an effort to minimize these growth related defects and other growth-related limitations. Growth of the oxide on GaN is characterized analytically by RHEED, XRD, and XPS. Preliminary MOS electrical analysis of a 50 Å La2O3 on GaN shows superior leakage performance as compared to significantly thicker Si3N4 dielectric.

On `non-stoichiometric phases' in thin films of rare-earth oxides

1978 ◽  
Vol 34 (6) ◽  
pp. 1025-1027 ◽  
Author(s):  
M. Gasgnier ◽  
P. Caro
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Long Range ◽  
Short Range ◽  
Short Range Order ◽  
Rare Earth Oxides ◽  
Range Order ◽  
Acta Cryst ◽  
The Rare Earth

Kaul & Saxena [Acta Cryst. (1977), A33, 992-996] have reported the existence of long-range and short-range order in a non-stoichiometric phase 'LnO x ' (Ln = rare earth). It is shown that the experiments they are describing are indeed the oxidation of the rare-earth hydride LnH2 into the rare-earth cubic C-type sesquioxide. The interpretation they give of their experiments is to be discarded entirely.

Nano Crystallite ZrO2, La2O3 and CeO2: Synthesis, Characterization and their Properties

2013 ◽  
Vol 209 ◽  
pp. 212-215
Author(s):  
A.K. Patel ◽  
A.R. Umatt ◽  
B.S. Chakrabarty
Keyword(s):  
Rare Earth ◽  
Surface Area ◽  
Gas Adsorption ◽  
Chemical Properties ◽  
Rare Earth Oxide ◽  
Combustion Method ◽  
Rare Earth Oxides ◽  
Precipitation Method ◽  
Reaction Conditions ◽  
The Rare Earth

It is well known that a minor addition of rare earth oxides can provide a beneficial effect towards various catalytic reactions. Use of rare earth oxide in different applications could improve commercial productivity in an affordable way. Among the rare earth oxides, ZrO2, La2O3 and CeO2 are very interesting due to their various characteristics showing a large range of applications in organic reactions. The changes in the molecular properties of materials at the nano scale level greatly enhance their physical properties as well as chemical properties and activity. Due to the extremely small size of the particles, an increased surface area is provided to the reactant enabling more molecules to react at the same time, thereby speeding up the process. In this work, the enhancement in the catalytic activity of these nano structured rare earth oxides has been studied under different reaction conditions. Nano crystalline ZrO2, La2O3 and CeO2 samples were synthesized using precipitation method and optimum reaction conditions have been established; whereas the corresponding bulk samples were synthesized by combustion method. The identification of phase and crystalline size of synthesized oxides have been done by X-ray diffraction, the band gape of these three oxides in both the forms has been analyzed by UV absorbance and surface area has been determined by gas adsorption analysis (BET). Moreover their different properties and the activity of nano crystallite oxides have also been compared with their bulk counterparts. Even the activity of ZrO2 is also compared with the rare earth oxides La2O3 and CeO2.

Study on the calcination experiments of rare earth carbonates using microwave heating

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Guo Lin ◽  
Libo Zhang ◽  
Shaohua Yin ◽  
Jinhui Peng ◽  
Shiwei Li ◽  
...  
Keyword(s):  
Rare Earth ◽  
Microwave Heating ◽  
Rare Earth Oxides ◽  
Particle Analysis ◽  
Scanning Calorimetry ◽  
Vibration Absorption ◽  
Ft Ir ◽  
Average Size ◽  
Rare Earth Carbonates ◽  
The Rare Earth

AbstractThe heating behavior and effect of experimental parameters like holding time, calcination temperature and microwave power on the weight loss of the mixed rare earth carbonate using microwave heating have been studied, also characterized by X-ray diffraction, thermogravimetry-differential scanning calorimetry, scanning electron microscopy (SEM), particle analysis and Fourier transform infrared (FT-IR). The results show the following: rare earth oxides are obtained at 850°C for holding 1 h; FT-IR analysis indicates that the vibration absorption peak of carbonate disappears after calcination using microwave, confirming the feasibility of microwave calcination for the rare earth carbonates; SEM shows that the rare earth oxides have the characteristics of better and finer particles, have better dispersion and have surface that is more loose and porous than that of products using conventional calcination; particle analysis indicates that average size (D

Effects of Slag Refining and Vacuum Treatment on De-Phosphorus from MG-Si Using CaO-SiO2-CaCl2 Slag

2013 ◽  
Vol 815 ◽  
pp. 773-777
Author(s):  
Liu Qing Huang ◽  
Hui Xian Lai ◽  
Ming Fang ◽  
Cheng Hao Lu ◽  
Juan Chen ◽  
...  
Keyword(s):  
Detailed Analysis ◽  
Removal Efficiency ◽  
Vacuum Treatment ◽  
Metallurgical Grade Silicon ◽  
Slag Refining ◽  
Precipitated Phase ◽  
Obvious Change ◽  
Grade Silicon ◽  
P Distribution ◽  
P Removal

This paper presents a detailed analysis of the effect of slag refining and vacuum treatment on P removal from metallurgical-grade silicon using CaO-SiO2-CaCl2 slag. It demonstrates that both of CaO: SiO2 ratio and CaCl2 content have significant effects on the P removal. Increasing CaO: SiO2 ratio was found to decrease the P removal efficiency after slag refining and vacuum treatment, and the distribution of P shows a tendency to concentrate in the precipitated phase after slag refining. It is also determined that the highest removal efficiency of P was attained when CaCl2 content was 5wt%( CaO:SiO2=1:1), but no obvious change was observed on P distribution after slag refining of varying CaCl2 content.

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