scholarly journals Congélation d’émulsions : de la mayonnaise à la métallurgie

2020 ◽  
pp. 22-27
Author(s):  
Sylvain Deville ◽  
Cécile Monteux
Keyword(s):  
Transport Diffusion

Si congeler de la mayonnaise n’est pas recommandé, cela pourrait toutefois nous aider à comprendre la fabrication d’alliages métalliques, la cryopréservation des cellules ou encore la congélation des sols en hiver. Nous nous intéressons ici au cas des gouttes d’huile dans une émulsion, observées par microscopie confocale au cours de la congélation. De nombreux phénomènes physiques (transport, diffusion, solidification, instabilités) prennent place lors de ce processus, offrant aux physicien.ne.s un problème inédit aux multiples ramifications. Ces études pourraient améliorer notre compréhension de plusieurs phénomènes de solidification, naturels comme technologiques.

scholarly journals GLOBAL EXISTENCE RESULTS FOR THE ANISOTROPIC BOUSSINESQ SYSTEM IN DIMENSION TWO

2011 ◽  
Vol 21 (03) ◽  
pp. 421-457 ◽  
Author(s):  
RAPHAËL DANCHIN ◽  
MARIUS PAICU
Keyword(s):  
Global Existence ◽  
Turbulent Flows ◽  
Vertical Direction ◽  
Boussinesq System ◽  
Navier Stokes ◽  
Two Dimensional ◽  
Incompressible Euler Equation ◽  
Navier Stokes Equation ◽  
Transport Diffusion ◽  
Anisotropic Viscosity

Models with a vanishing anisotropic viscosity in the vertical direction are of relevance for the study of turbulent flows in geophysics. This motivates us to study the two-dimensional Boussinesq system with horizontal viscosity in only one equation. In this paper, we focus on the global existence issue for possibly large initial data. We first examine the case where the Navier–Stokes equation with no vertical viscosity is coupled with a transport equation. Second, we consider a coupling between the classical two-dimensional incompressible Euler equation and a transport–diffusion equation with diffusion in the horizontal direction only. For both systems, we construct global weak solutions à la Leray and strong unique solutions for more regular data. Our results rest on the fact that the diffusion acts perpendicularly to the buoyancy force.

scholarly journals Knudsen Gas in a Finite Random Tube: Transport Diffusion and First Passage Properties

2010 ◽  
Vol 140 (5) ◽  
pp. 948-984 ◽  
Author(s):  
Francis Comets ◽  
Serguei Popov ◽  
Gunter M. Schütz ◽  
Marina Vachkovskaia
Keyword(s):  
First Passage ◽  
Transport Diffusion ◽  
Knudsen Gas

scholarly journals Composition dependent transport diffusion in non-ideal mixtures from spatially resolved nuclear magnetic resonance spectroscopy

2018 ◽  
Vol 20 (44) ◽  
pp. 28185-28192 ◽  
Author(s):  
Christian F. Pantoja ◽  
Y. Mauricio Muñoz-Muñoz ◽  
Lorraine Guastar ◽  
Jadran Vrabec ◽  
Julien Wist
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Diffusion Coefficient ◽  
Nmr Spectroscopy ◽  
Magnetic Resonance ◽  
Magnetic Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Spatially Resolved ◽  
Transport Diffusion ◽  
Dependent Transport ◽  
Nuclear Magnetic

Nuclear magnetic resonance (NMR) spectroscopy can also be used for the measurement of the Fick diffusion coefficient.

Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures

2013 ◽  
Vol 740-742 ◽  
pp. 498-501
Author(s):  
A.V. Afanasyev ◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
A.S. Petrov
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Wide Temperature Range ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Reverse Current ◽  
Current Generation ◽  
Temperature Range ◽  
Working Temperature ◽  
Transport Diffusion

3C-SiC (n) / Si (p) heterostructures were obtained and investigated in a wide temperature range. It was shown, the main mechanisms of charge transport diffusion and recombination. The properties of silicon substrate were determining the working temperature range of investigated diodes. Therefore the rectifying properties of 3С-SiC(n)/Si(p) diodes were stable only up to 473 K. Two sites with different activation energies were observed on the Jrev(1/T) curves at fixed voltage: 0,32 eV which, characterized states on the SiC/Si interface, Е2 ≈ 0,55 eV which corresponds to the middle of silicon bandgap and defines existence of reverse current generation component.

Coexistence of Ballistic Transport, Diffusion, and Localization in Surface Disordered Waveguides

1998 ◽  
Vol 80 (5) ◽  
pp. 948-951 ◽  
Author(s):  
J. A. Sánchez-Gil ◽  
V. Freilikher ◽  
I. Yurkevich ◽  
A. A. Maradudin
Keyword(s):  
Ballistic Transport ◽  
Transport Diffusion
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