Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures

2013 ◽  
Vol 740-742 ◽  
pp. 498-501
Author(s):  
A.V. Afanasyev ◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
A.S. Petrov
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Wide Temperature Range ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Reverse Current ◽  
Current Generation ◽  
Temperature Range ◽  
Working Temperature ◽  
Transport Diffusion

3C-SiC (n) / Si (p) heterostructures were obtained and investigated in a wide temperature range. It was shown, the main mechanisms of charge transport diffusion and recombination. The properties of silicon substrate were determining the working temperature range of investigated diodes. Therefore the rectifying properties of 3С-SiC(n)/Si(p) diodes were stable only up to 473 K. Two sites with different activation energies were observed on the Jrev(1/T) curves at fixed voltage: 0,32 eV which, characterized states on the SiC/Si interface, Е2 ≈ 0,55 eV which corresponds to the middle of silicon bandgap and defines existence of reverse current generation component.

CMOS Circuits on Silicon Carbide for High Temperature Operation

2014 ◽  
Vol 1693 ◽  
Author(s):  
David T. Clark ◽  
Robin F. Thompson ◽  
Aled E. Murphy ◽  
David A. Smith ◽  
Ewan P. Ramsay ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Logic Circuits ◽  
Digital Logic ◽  
Cmos Integrated Circuit ◽  
Temperature Range ◽  
Simple Logic

ABSTRACTWe present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range.Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature “micro-oven” system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

scholarly journals Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5909
Author(s):  
Hicham Helal ◽  
Zineb Benamara ◽  
Mouhamed Amine Wederni ◽  
Sabrine Mourad ◽  
Kamel Khirouni ◽  
...  
Keyword(s):  
Barrier Height ◽  
Wide Temperature Range ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Schottky Contacts ◽  
Temperature Range ◽  
Tunnel Mechanism ◽  
Nitridation Process

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

scholarly journals Hydrogen bonding and charge transport in a protic polymerized ionic liquid

Soft Matter ◽  
2020 ◽  
Vol 16 (26) ◽  
pp. 6091-6101 ◽  
Author(s):  
Arthur Markus Anton ◽  
Falk Frenzel ◽  
Jiayin Yuan ◽  
Martin Tress ◽  
Friedrich Kremer
Keyword(s):  
Ionic Liquid ◽  
Hydrogen Bonding ◽  
Fourier Transform ◽  
Charge Transport ◽  
Wide Temperature Range ◽  
Dielectric Spectroscopy ◽  
Fourier Transform Infrared ◽  
Polymerized Ionic Liquid ◽  
Temperature Range ◽  
Broadband Dielectric Spectroscopy

Hydrogen bonding and charge transport in the protic polymerized ionic liquid PAAPS are studied by combining Fourier transform infrared (FTIR) and broadband dielectric spectroscopy (BDS) in a wide temperature range from 170 to 300 K.

scholarly journals A dual-phase alloy with ultrahigh strength-ductility synergy over a wide temperature range

2021 ◽  
Vol 7 (34) ◽  
pp. eabi4404
Author(s):  
Raymond Kwesi Nutor ◽  
Qingping Cao ◽  
Ran Wei ◽  
Qingmei Su ◽  
Gaohui Du ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Elevated Temperatures ◽  
Interesting Property ◽  
Specific Yield ◽  
Dynamic Strain ◽  
Face Centered Cubic ◽  
High Entropy ◽  
Temperature Range ◽  
Face Centered ◽  
Multiple Deformation

High-entropy alloys (HEAs), as an emerging class of materials, have pointed a pathway in developing alloys with interesting property combinations. Although they are not exempted from the strength-ductility trade-off, they present a standing chance in overcoming this challenge. Here, we report results for a precipitation-strengthening strategy, by tuning composition to design a CoNiV-based face-centered cubic/B2 duplex HEA. This alloy sustains ultrahigh gigapascal-level tensile yield strengths and excellent ductility from cryogenic to elevated temperatures. The highest specific yield strength (~150.2 MPa·cm3/g) among reported ductile HEAs is obtained. The ability of the alloy presented here to sustain this excellent strength-ductility synergy over a wide temperature range is aided by multiple deformation mechanisms i.e., twins, stacking faults, dynamic strain aging, and dynamic recrystallization. Our results open the avenue for designing precipitation-strengthened lightweight HEAs with advanced strength-ductility combinations over a wide service temperature range.

Experimental reliability studies and SPICE simulation for EEPROM at temperatures up to 450 °C

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000005-000009
Author(s):  
A. Kelberer ◽  
S. Dreiner ◽  
K. Grella ◽  
D. Dittrich ◽  
H. Kappert ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Elevated Temperatures ◽  
Endurance Performance ◽  
Memory Cell ◽  
Spice Simulation ◽  
Macro Model ◽  
Temperature Range ◽  
Insight Into

The paper presents reliability studies of single polysilicon EEPROM cells at temperatures from 50 °C to 450 °C. The technically challenging measurements at elevated temperatures above 250 °C have been carried out for accelerated reliability studies. Furthermore, a SPICE macro model has been extended to the wide temperature range to describe the retention and endurance performance of the memory cell and to enable a better insight into the physics involved.

Experimental Reliability Studies and SPICE Simulation for EEPROM at Temperatures up to 450°C

2016 ◽  
Vol 13 (1) ◽  
pp. 33-37
Author(s):  
A. Kelberer ◽  
S. Dreiner ◽  
K. Grella ◽  
D. Dittrich ◽  
H. Kappert ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
Elevated Temperatures ◽  
Endurance Performance ◽  
Memory Cell ◽  
Spice Simulation ◽  
Macro Model ◽  
Temperature Range ◽  
Read Only Memory ◽  
Insight Into

This article presents reliability studies of single polysilicon electrically erasable programmable read-only memory (EEPROM) cells at temperatures from 50°C to 450°C. The technically challenging measurements at elevated temperatures >250°C have been carried out for accelerated reliability studies. Furthermore, a SPICE macro model has been extended to the wide temperature range to describe the retention and endurance performance of the memory cell and to enable a better insight into the physics involved.

Fibre-optic temperature sensor with wide temperature range characteristics

1987 ◽  
Vol 134 (5) ◽  
pp. 291 ◽  
Author(s):  
K.T.V. Grattan ◽  
J.D. Manwell ◽  
S.M.L. Sim ◽  
C.A. Willson
Keyword(s):  
Wide Temperature Range ◽  
Temperature Sensor ◽  
Fibre Optic ◽  
Temperature Range

Enabling highly reversible sodium metal cycling across a wide temperature range with dual-salt electrolytes

2021 ◽  
Author(s):  
Akila C. Thenuwara ◽  
Pralav P. Shetty ◽  
Neha Kondekar ◽  
Chuanlong Wang ◽  
Weiyang Li ◽  
...  
Keyword(s):  
Wide Temperature Range ◽  
High Energy ◽  
Liquid Electrolyte ◽  
Metal Cycling ◽  
Temperature Range ◽  
Sodium Metal ◽  
Wide Range

A new dual-salt liquid electrolyte is developed that enables the reversible operation of high-energy sodium-metal-based batteries over a wide range of temperatures down to −50 °C.

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