Growth of high‐quality 3C‐SiC epitaxial films on off‐axis Si(001) substrates at 850 °C by reactive magnetron sputtering

1994 ◽  
Vol 65 (6) ◽  
pp. 725-727 ◽  
Author(s):  
Q. Wahab ◽  
M. R. Sardela ◽  
L. Hultman ◽  
A. Henry ◽  
M. Willander ◽  
...  
2018 ◽  
Vol 431 ◽  
pp. 152-159 ◽  
Author(s):  
Liang-xian Chen ◽  
Hao Liu ◽  
Sheng Liu ◽  
Cheng-ming Li ◽  
Yi-chao Wang ◽  
...  

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