Structural properties of low temperature plasma enhanced chemical vapor deposited silicon oxide films using disilane and nitrous oxide
1995 ◽
Vol 24
(10)
◽
pp. 1507-1510
◽
1997 ◽
Vol 15
(5)
◽
pp. 1843
◽
2009 ◽
Vol 9
(6)
◽
pp. 3734-3741
◽
Keyword(s):
Keyword(s):
MOSFET Characteristics in low-temperature plasma-enhanced chemical vapor deposited epitaxial silicon
1986 ◽
Vol 7
(4)
◽
pp. 206-207
◽
1987 ◽
Vol 34
(11)
◽
pp. 2367-2367
◽
Keyword(s):
1993 ◽
Vol 140
(10)
◽
pp. 3014-3018
◽
Keyword(s):
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes
◽
2006 ◽
Vol 10
(3)
◽
pp. 457-466