Formation of a p‐n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method
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1993 ◽
Vol 51
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pp. 1118-1119
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2019 ◽
Vol 12
(03)
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pp. 1950032
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2010 ◽
Vol 75
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pp. 202-207
2020 ◽
Vol 29
(5)
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pp. 846-852
2004 ◽
Vol 36
(4-6)
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pp. 403-408
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