Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

1998 ◽  
Vol 72 (22) ◽  
pp. 2868-2870 ◽  
Author(s):  
J. Z. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
M. A. Khan
Keyword(s):  
Persistent Photoconductivity ◽  
Ultraviolet Detector ◽  
Gan Heterostructure

Characterization of fluorine-plasma-induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity

2008 ◽  
Vol 5 (6) ◽  
pp. 1892-1894 ◽  
Author(s):  
B. K. Li ◽  
K. J. Chen ◽  
K. M. Lau ◽  
W. K. Ge ◽  
J. N. Wang
Keyword(s):  
Persistent Photoconductivity ◽  
Deep Centers ◽  
Gan Heterostructure

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

2000 ◽  
Vol 639 ◽  
Author(s):  
S. Elhamri ◽  
A. Saxler ◽  
D. Cull ◽  
W. C. Mitchel ◽  
C.R. Elsass ◽  
...  
Keyword(s):  
Carrier Density ◽  
Light Emitting Diode ◽  
High Mobility ◽  
Initial Increase ◽  
Persistent Photoconductivity ◽  
Light Emitting ◽  
Alloy Scattering ◽  
Temperature Variable ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

ABSTRACTTemperature-variable Hall and Shubnikov- de Haas effects have been used to study persistent photoconductivity in an AlGaN/GaN heterojunction. At liquid helium temperatures, the mobility in this structure was close to 55000 cm2/Vs. A blue GaN-based light emitting diode was used to illuminate the sample. This illumination resulted in a persistent photocurrent, which allowed us to vary the carrier density and study the dependence of the mobility on the carrier concentration. Exposing the sample to this light resulted in an increase in the carrier density. For small increases in the density, the mobility also increased. However, unlike in previous reports by other authors, extended illumination resulted in an increase in the density and a decrease in the mobility. The initial increase in the mobility is attributed to increased screening due to the increase in the carrier density, while the decrease in the mobility may be attributed to alloy scattering.

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

2019 ◽  
Vol 12 (12) ◽  
pp. 122007 ◽  
Author(s):  
Jianwen Sun ◽  
Teng Zhan ◽  
Zewen Liu ◽  
Junxi Wang ◽  
Xiaoyan Yi ◽  
...  
Keyword(s):  
Persistent Photoconductivity ◽  
Pulsed Heating ◽  
Gan Heterostructure

Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure

2000 ◽  
Vol 88 (11) ◽  
pp. 6583-6588 ◽  
Author(s):  
S. Elhamri ◽  
A. Saxler ◽  
W. C. Mitchel ◽  
C. R. Elsass ◽  
I. P. Smorchkova ◽  
...  
Keyword(s):  
High Mobility ◽  
Persistent Photoconductivity ◽  
Gan Heterostructure

Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
J. Z. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
M. A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Metal Organic ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure ◽  
P Type ◽  
Organic Chemical Vapor Deposition

ABSTRACTPersistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.

scholarly journals A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater

2020 ◽  
Vol 8 (16) ◽  
pp. 5409-5416 ◽  
Author(s):  
Jianwen Sun ◽  
Shuo Zhang ◽  
Teng Zhan ◽  
Zewen Liu ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Ultraviolet Detector ◽  
Gan Heterostructure ◽  
First Time

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time.

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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