scholarly journals A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater

2020 ◽  
Vol 8 (16) ◽  
pp. 5409-5416 ◽  
Author(s):  
Jianwen Sun ◽  
Shuo Zhang ◽  
Teng Zhan ◽  
Zewen Liu ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Ultraviolet Detector ◽  
Gan Heterostructure ◽  
First Time

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time.

scholarly journals Self-Assembled Al Nanostructure/ZnO Quantum Dot Heterostructures for High Responsivity and Fast UV Photodetector

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Sisi Liu ◽  
Ming-Yu Li ◽  
Jianbing Zhang ◽  
Dong Su ◽  
Zhen Huang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Self Assembled

scholarly journals High responsivity ultraviolet detector based on novel SnO2 nanoarrays

RSC Advances ◽  
2019 ◽  
Vol 9 (64) ◽  
pp. 37201-37206 ◽  
Author(s):  
Xinhua Pan ◽  
Tao Zhang ◽  
Qiaoqi Lu ◽  
Weihao Wang ◽  
Zhizhen Ye
Keyword(s):  
Hydrothermal Method ◽  
Tin Oxide ◽  
High Responsivity ◽  
Ultraviolet Detector

In this work, tin oxide (SnO2) nanoarrays (NAs) with a novel morphology were fabricated by a hydrothermal method.

Enhanced performance of a TiO2 ultraviolet detector modified with graphene oxide

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83795-83800 ◽  
Author(s):  
Dezhong Zhang ◽  
Fuyi Jing ◽  
Fengli Gao ◽  
Liang Shen ◽  
Dongming Sun ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Uv Photodetector ◽  
Noise Current ◽  
Ultraviolet Detector ◽  
Metal Semiconductor Metal

The performance of a Schottky metal–semiconductor–metal (MSM) ultraviolet (UV) photodetector is limited by the insufficient gain and the uncontrollable noise current.

Tunable UV response and high performance of zinc stannate nanoparticle film photodetectors

2016 ◽  
Vol 4 (25) ◽  
pp. 6176-6184 ◽  
Author(s):  
Caihong Liu ◽  
Adimali Piyadasa ◽  
Marcin Piech ◽  
Sameh Dardona ◽  
Zheng Ren ◽  
...  
Keyword(s):  
Visible Light ◽  
High Performance ◽  
Casting Process ◽  
Zinc Stannate ◽  
Uv Photodetectors ◽  
High Responsivity ◽  
Highly Efficient ◽  
Uv Response ◽  
First Time ◽  
Nanoparticle Film

A robust, inexpensive, and scalable drop-casting process was successfully developed to fabricate highly efficient and robust UV photodetectors with uniform and continuous films of ZnSnO3 and Zn2SnO4–SnO2 nanoparticles for the first time. An extreme high responsivity of ∼0.5 A W−1 at 5.0 V bias was achieved with good visible-light rejection.

scholarly journals High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

2017 ◽  
Vol 110 (22) ◽  
pp. 221107 ◽  
Author(s):  
Anamika Singh Pratiyush ◽  
Sriram Krishnamoorthy ◽  
Swanand Vishnu Solanke ◽  
Zhanbo Xia ◽  
Rangarajan Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Uv

High Responsivity MgxZn1−xO Film UV Photodetector Grown by RF Sputtering

2015 ◽  
Vol 27 (9) ◽  
pp. 978-981 ◽  
Author(s):  
Jyun-Yi Li ◽  
Sheng-Po Chang ◽  
Hung-Hsu Lin ◽  
Shoou-Jinn Chang
Keyword(s):  
Rf Sputtering ◽  
Uv Photodetector ◽  
High Responsivity

THERMAL PROCESSING OF BUNDLED TUNGSTEN OXIDE NANOWIRES

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1541-1547 ◽  
Author(s):  
SHIBIN SUN ◽  
YIMIN ZHAO ◽  
YONGDE XIA ◽  
ZENGDA ZOU ◽  
GUANGHUI MIN ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Surface Area ◽  
High Surface ◽  
High Surface Area ◽  
Wide Band ◽  
Temperature Limit ◽  
Wide Band Gap ◽  
Significant Drop ◽  
Oxide Nanowires ◽  
First Time

Taking the wide band gap one-dimensional (1-D) tungsten oxide nanowires as an example, we here demonstrate systematically the physical characteristics of thermally processed nanowires at temperatures ranging from 400°C to 1000°C, for the first time. Accompanied by a significant drop of specific surface area from 151 m2/g for the as-prepared nanowires to 109 m2/g and 66 m2/g subject to annealing at 400°C and 450°C, dramatically morphology evolution and phase transformation have also been observed. The nanostructured bundles became straighter, larger in diameters and shorter in length, and eventually became irregular particles with size up to 5 µm. The Brunauer-Emmett-Tettler (BET) result suggests that 400°C can be considered as a top temperature limit in nanodevice design where high surface area is important, e.g. in gas sensors. A protocol for thermally processing of these bundled tungsten nanowires has been established.

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