Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

2003 ◽  
Vol 93 (9) ◽  
pp. 5274-5281 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Haiqiang Yang ◽  
Eugen Trifan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

scholarly journals Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Yu-Chiao Lin ◽  
Ikai Lo ◽  
Hui-Chun Shih ◽  
Mitch M. C. Chou ◽  
D. M. Schaadt
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Anisotropic Growth ◽  
X Ray Diffraction ◽  
X Ray

M-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of M-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [112-0]. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

2006 ◽  
Vol 88 (1) ◽  
pp. 011916 ◽  
Author(s):  
Lin Zhou ◽  
David J. Smith ◽  
D. F. Storm ◽  
D. S. Katzer ◽  
S. C. Binari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Layer Growth ◽  
Nucleation Layer ◽  
N Flux

Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)

2001 ◽  
Vol 693 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
O. Shigiltchoff ◽  
R. P. Devatya ◽  
W. J. Choyke
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Flux Ratio ◽  
X Ray ◽  
N Flux

AbstractGallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on vicinal 6H-SiC(0001) substrates with [1 1 00] and [11 2 0] miscut directions. The hydrogen-etched substrates display straight, or chevron shaped steps respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

Surface morphology and optical characterization of GaN grown on α-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy

1997 ◽  
Vol 70 (22) ◽  
pp. 3023-3025 ◽  
Author(s):  
M. Yeadon ◽  
F. Hamdani ◽  
G. Y. Xu ◽  
A. Salvador ◽  
A. E. Botchkarev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Α Al2o3

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 80 (5) ◽  
pp. 805-807 ◽  
Author(s):  
A. Hierro ◽  
A. R. Arehart ◽  
B. Heying ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Trap States ◽  
N Flux

Strong influence of Ga/N flux ratio on Mn incorporation into Ga1−xMnxN epilayers grown by plasma-assisted molecular beam epitaxy

2003 ◽  
Vol 83 (22) ◽  
pp. 4580-4582 ◽  
Author(s):  
S. Kuroda ◽  
E. Bellet-Amalric ◽  
R. Giraud ◽  
S. Marcet ◽  
J. Cibert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strong Influence ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux

scholarly journals Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

2002 ◽  
Vol 7 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
O. Shigiltchoff ◽  
R. P. Devaty ◽  
W. J. Choyke
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Flux Ratio ◽  
X Ray ◽  
Image Position ◽  
N Flux

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 0 0] and [1 1 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

scholarly journals Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

2016 ◽  
Vol 24 (1) ◽  
Author(s):  
D. Benyahia ◽  
Ł. Kubiszyn ◽  
K. Michalczewski ◽  
A. Kębłowski ◽  
P. Martyniuk ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Flux Ratio ◽  
X Ray Diffraction ◽  
Group V

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

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