Optical Crystallographic Orientation Determination Using a He‐Ne Gas Laser

1965 ◽  
Vol 36 (11) ◽  
pp. 1668-1669 ◽  
Author(s):  
Robert E. Green
Keyword(s):  
Crystallographic Orientation ◽  
Gas Laser ◽  
Orientation Determination

Twin and topotactic growth of β-eucryptite dendrites and their lattice coincidence analysed by the reticular theory

2013 ◽  
Vol 46 (1) ◽  
pp. 216-223
Author(s):  
Shan-Rong Zhao ◽  
Hai-Jun Xu ◽  
Rong Liu ◽  
Qin-Yan Wang ◽  
Xian-Yu Liu
Keyword(s):  
Solid Solution ◽  
Crystallographic Orientation ◽  
Electron Backscatter Diffraction ◽  
Electron Backscatter ◽  
Ebsd Technique ◽  
Backscatter Diffraction ◽  
Orientation Determination

Snowflake-shaped dendrites of β-eucryptite–β-quartz solid solution were artificially crystallized in a matt glaze, and the crystallographic orientation of the dendrites was analysed by the electron backscatter diffraction (EBSD) technique. The six branches of a snowflake-shaped dendrite in the plane (0001) are along 〈110〉. From the orientation determination, a twin relationship and a topotactic relationship between dendrites were found. The twin axes are [011], [0{\overline 1}1] and [210], and the twin planes perpendicular to the twin axes are ({\overline 1}2{\overline 1}2) and (1{\overline 2}12). From the reticular theory of twinning, it was calculated that the twin indexn= 2 and the obliquity ω = 3.2877°. The studied dendrite is a twin by reticular pseudomerohedry with low twin index and obliquity. In the topotactic growth, no twin elements have been found, but the three main crystallographic directions 〈001〉, 〈210〉 and 〈110〉 of the two dendritic crystals overlap each other. The degree of lattice coincidence between the two crystals in this topotactic growth is also discussed.

scholarly journals Basic Concepts and Recent Advances of Crystallographic Orientation Determination of Graphene by Raman Spectroscopy

Crystals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 375 ◽  
Author(s):  
Yucheng Lan ◽  
Mobolaji Zondode ◽  
Hua Deng ◽  
Jia-An Yan ◽  
Marieme Ndaw ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystallographic Orientation ◽  
Graphene Nanosheets ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Unique Material ◽  
Determination Methods ◽  
Orientation Determination ◽  
Crystallographic Orientations

Graphene is a kind of typical two-dimensional material consisting of pure carbon element. The unique material shows many interesting properties which are dependent on crystallographic orientations. Therefore, it is critical to determine their crystallographic orientations when their orientation-dependent properties are investigated. Raman spectroscopy has been developed recently to determine crystallographic orientations of two-dimensional materials and has become one of the most powerful tools to characterize graphene nondestructively. This paper summarizes basic aspects of Raman spectroscopy in crystallographic orientation of graphene nanosheets, determination principles, the determination methods, and the latest achievements in the related studies.

scholarly journals Orientation Determination by Continuous Etching Patterns in Copper and Copper Alloys

1995 ◽  
Vol 24 (4) ◽  
pp. 199-219 ◽  
Author(s):  
W. H. Wang ◽  
X. Sun ◽  
G. D. Köhlhoff ◽  
K. Lücke
Keyword(s):  
Crystallographic Orientation ◽  
Copper Alloys ◽  
New Method ◽  
Etch Pits ◽  
Etch Patterns ◽  
Grain Orientations ◽  
Etched Surface ◽  
Other Orientation ◽  
Orientation Determination

A new method for determination of grain orientations using etch patterns was developed for copper and copper alloys. This method is based on the fact, that one gets etch patterns characteristic for the crystallographic orientation of the etched surface, if a specimen of copper or copper alloys is etched in conc. HNO3. In contrast to etch pits, the etch patterns are developed continuously over the whole grain. This allows a direct and continuous observation of the orientation changes within and between the grains, which is not possible for many other orientation determination methods. The determination accuracy of the new method depends on the crystallographic orientation of the etched surface and varies between 2° and 10°. For some special surface orientations the etch patterns allow even the determination of very small orientation changes (≤ 2°), occurring e.g. in a deformed grain.

X-ray microprobe for materials science

1994 ◽  
Vol 52 ◽  
pp. 56-57
Author(s):  
G.E. Ice
Keyword(s):  
Crystallographic Orientation ◽  
Local Structure ◽  
Materials Science ◽  
Chemical Information ◽  
X Ray Diffraction ◽  
Ray Optics ◽  
X Ray ◽  
Novel Materials ◽  
New Information ◽  
Elemental Sensitivity

The increasing availability of synchrotron x-ray sources has stimulated the development of advanced hard x-ray (E≥5 keV) microprobes. With new x-ray optics these microprobes can achieve micron and submicron spatial resolutions. The inherent elemental and crystallographic sensitivity of an x-ray microprobe and its inherently nondestructive and penetrating nature will have important applications to materials science. For example, x-ray fluorescent microanalysis of materials can reveal elemental distributions with greater sensitivity than alternative nondestructive probes. In materials, segregation and nonuniform distributions are the rule rather than the exception. Common interfaces to whichsegregation occurs are surfaces, grain and precipitate boundaries, dislocations, and surfaces formed by defects such as vacancy and interstitial configurations. In addition to chemical information, an x-ray diffraction microprobe can reveal the local structure of a material by detecting its phase, crystallographic orientation and strain.Demonstration experiments have already exploited the penetrating nature of an x-ray microprobe and its inherent elemental sensitivity to provide new information about elemental distributions in novel materials.

Texture measurements in Al2O3 using BEKP

1994 ◽  
Vol 52 ◽  
pp. 608-609
Author(s):  
M. D. Vaudin ◽  
J. P. Cline
Keyword(s):  
Neutron Diffraction ◽  
Rapid Method ◽  
Crystallographic Orientation ◽  
Specimen Surface ◽  
X Ray Diffraction ◽  
Anisotropic Crystal ◽  
X Ray ◽  
Verification Method ◽  
Crystal Properties ◽  
Backscattered Electron

The study of preferred crystallographic orientation (texture) in ceramics is assuming greater importance as their anisotropic crystal properties are being used to advantage in an increasing number of applications. The quantification of texture by a reliable and rapid method is required. Analysis of backscattered electron Kikuchi patterns (BEKPs) can be used to provide the crystallographic orientation of as many grains as time and resources allow. The technique is relatively slow, particularly for noncubic materials, but the data are more accurate than any comparable technique when a sufficient number of grains are analyzed. Thus, BEKP is well-suited as a verification method for data obtained in faster ways, such as x-ray or neutron diffraction. We have compared texture data obtained using BEKP, x-ray diffraction and neutron diffraction. Alumina specimens displaying differing levels of axisymmetric (0001) texture normal to the specimen surface were investigated.BEKP patterns were obtained from about a hundred grains selected at random in each specimen.

Automatic analysis of Kikuchi diffraction patterns

1994 ◽  
Vol 52 ◽  
pp. 900-901
Author(s):  
H. Weiland ◽  
D. P. Field
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Spatial Resolution ◽  
Relevant Information ◽  
Crystalline Materials ◽  
Large Size ◽  
Transmission Electron ◽  
New Type ◽  
Diffraction Patterns ◽  
Orientation Determination

Recent advances in the automatic indexing of backscatter Kikuchi diffraction patterns on the scanning electron microscope (SEM) has resulted in the development of a new type of microscopy. The ability to obtain statistically relevant information on the spatial distribution of crystallite orientations is giving rise to new insight into polycrystalline microstructures and their relation to materials properties. A limitation of the technique in the SEM is that the spatial resolution of the measurement is restricted by the relatively large size of the electron beam in relation to various microstructural features. Typically the spatial resolution in the SEM is limited to about half a micron or greater. Heavily worked structures exhibit microstructural features much finer than this and require resolution on the order of nanometers for accurate characterization. Transmission electron microscope (TEM) techniques offer sufficient resolution to investigate heavily worked crystalline materials.Crystal lattice orientation determination from Kikuchi diffraction patterns in the TEM (Figure 1) requires knowledge of the relative positions of at least three non-parallel Kikuchi line pairs in relation to the crystallite and the electron beam.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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