Laser-induced wavy pattern formation in metal thin films

2004 ◽  
Vol 85 (11) ◽  
pp. 1934-1936 ◽  
Author(s):  
Ke Xiao ◽  
Zi Sheng Guan ◽  
Guo Jie Wang ◽  
Lei Jiang ◽  
Dao Ben Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pattern Formation ◽  
Metal Thin Films

Delamination and Buckling Induced by Compressive Strain in Metal Thin Films

2005 ◽  
Vol 490-491 ◽  
pp. 655-660 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Compressive Strain ◽  
Ex Situ ◽  
Metal Thin Films ◽  
Force Microscopy ◽  
Steady Growth ◽  
Sputter Deposited

The pattern formation during delamination and buckling in sputter-deposited tungsten thin films under large compressive stresses was investigated. The films were analyzed in situ by a cantilever beam technique, and ex situ by atomic force microscopy (AFM) and focused ion beam. Depending on the magnitude of compressive strain in thin films, different types of buckling patterns were observed. For stresses above a critical value, there was a regime of steady growth in which the incipient blister evolves into a regular sinusoidal-like propagation. At higher strains, the sinusoidallike wrinkles were developed with constant widths and wavelengths. Some of the wrinkles bifurcated to form branches. With further increase in stress the complicated buckling patches were formed with many irregular lobes. These types of pattern formation have been supported by elastic energy calculations.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Laser-Direct Patterning of Nanostructured Metal Thin Films

2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee
Keyword(s):  
Thin Films ◽  
Metal Thin Films ◽  
Direct Patterning ◽  
Nanostructured Metal

scholarly journals Nanoscale Transition Metal Thin Films: Growth Characteristics and Scaling Law for Interlayer Formation

2019 ◽  
Vol 11 (49) ◽  
pp. 46311-46326 ◽  
Author(s):  
Anirudhan Chandrasekaran ◽  
Robbert W. E. van de Kruijs ◽  
Jacobus M. Sturm ◽  
Andrey A. Zameshin ◽  
Fred Bijkerk
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Scaling Law ◽  
Growth Characteristics ◽  
Metal Thin Films

Fabrication of nanoporous noble metal thin films by O 2 plasma dealloying

2017 ◽  
Vol 631 ◽  
pp. 147-151 ◽  
Author(s):  
Geun-Hyuk Lee ◽  
Sehoon An ◽  
Seong Woo Jang ◽  
Sehoon Hwang ◽  
Sang Ho Lim ◽  
...  
Keyword(s):  
Thin Films ◽  
Noble Metal ◽  
Metal Thin Films

The Characteristics of Multilayer Thin Films Deposited with Metal Thin Films (Ag, Al, Cu)

2010 ◽  
Vol 97-101 ◽  
pp. 1768-1771 ◽  
Author(s):  
Dong Hun Kim ◽  
Riichi Murakami ◽  
Yun Hae Kim ◽  
Kyung Man Moon ◽  
Seung Jung An ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Particles ◽  
Zno Thin Films ◽  
Multilayer Thin Films ◽  
Electrical And Optical Properties ◽  
Metal Thin Films ◽  
Continuous Structure ◽  
Glass Substrates ◽  
The Difference ◽  
Sputtering System

In order to study the characteristics of multilayer thin films with a ZnO/ metal/ ZnO structure the manufacture of the thin films was performed by a dc (direct current) magnetron sputtering system on slide glass substrates. The ZnO thin films were manufactured with the thicknesses of 30 nm and 50 nm. Three kinds of metals (Ag, Al and Cu) were deposited with the thicknesses of 4 nm, 8 nm, 12 nm and 16 nm. The electrical and optical properties of the manufactured thin films were then observed. As a result, the multilayer thin films with an Ag layer represented the most excellent electrical conductivity. This is due to the difference in the fundamental electrical properties of each of the metals. The structures of the metal particles deposited on the ZnO thin films were observed by an SEM (scanning electron microscope). The thin films exhibited a continuous structure with regular spaces between the metal particles. This resulted in an increase of transmittance. This is considered by the decrease of scattering and of light absorption on thin films with a continuous structure.

Experimental investigation of laser induced forward transfer process of metal thin films

2002 ◽  
Vol 186 (1-4) ◽  
pp. 221-226 ◽  
Author(s):  
T. Sano ◽  
H. Yamada ◽  
T. Nakayama ◽  
I. Miyamoto
Keyword(s):  
Thin Films ◽  
Experimental Investigation ◽  
Transfer Process ◽  
Metal Thin Films ◽  
Forward Transfer

MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films

2021 ◽  
Author(s):  
Joung Eun Yoo ◽  
Ju Young Sung ◽  
Jin Ha Hwang ◽  
Inhee Maeng ◽  
Seung-Jae Oh ◽  
...  
Keyword(s):  
Thin Films ◽  
Max Phase ◽  
Metal Thin Films
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