The Characteristics of Multilayer Thin Films Deposited with Metal Thin Films (Ag, Al, Cu)

2010 ◽  
Vol 97-101 ◽  
pp. 1768-1771 ◽  
Author(s):  
Dong Hun Kim ◽  
Riichi Murakami ◽  
Yun Hae Kim ◽  
Kyung Man Moon ◽  
Seung Jung An ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Particles ◽  
Zno Thin Films ◽  
Multilayer Thin Films ◽  
Electrical And Optical Properties ◽  
Metal Thin Films ◽  
Continuous Structure ◽  
Glass Substrates ◽  
The Difference ◽  
Sputtering System

In order to study the characteristics of multilayer thin films with a ZnO/ metal/ ZnO structure the manufacture of the thin films was performed by a dc (direct current) magnetron sputtering system on slide glass substrates. The ZnO thin films were manufactured with the thicknesses of 30 nm and 50 nm. Three kinds of metals (Ag, Al and Cu) were deposited with the thicknesses of 4 nm, 8 nm, 12 nm and 16 nm. The electrical and optical properties of the manufactured thin films were then observed. As a result, the multilayer thin films with an Ag layer represented the most excellent electrical conductivity. This is due to the difference in the fundamental electrical properties of each of the metals. The structures of the metal particles deposited on the ZnO thin films were observed by an SEM (scanning electron microscope). The thin films exhibited a continuous structure with regular spaces between the metal particles. This resulted in an increase of transmittance. This is considered by the decrease of scattering and of light absorption on thin films with a continuous structure.

scholarly journals Effect of Different Deposition Power of In2O3Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Shang-Chao Hung ◽  
Kin-Tak Lam ◽  
Cheng-Fu Yang ◽  
Yu-Jhen Liou
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Transparent Electrode ◽  
Amorphous Structure ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Deposition Power ◽  
Sputtering System

The (In, Ga, Zn)Ox(IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5(Ga2O3-2 ZnO, GZO) and In2O3ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap(Eg)values of the IGZO thin film were evaluated from the plots of(αhν)2=c(hν-Eg). We would also show that the deposition power of In2O3target would have a large effect on mobility andEgvalue of the IGZO thin films.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno

Preparation and Characteristics of ZnO Thin Films Deposited on Glass Substrates

2001 ◽  
Vol 214-215 ◽  
pp. 193-198 ◽  
Author(s):  
Onwona Agyeman ◽  
Chao Nan Xu ◽  
Yun Liu ◽  
Morito Akiyama ◽  
Xu Guang Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Glass Substrates

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

2010 ◽  
Vol 10 (3) ◽  
pp. S463-S467 ◽  
Author(s):  
Kyu Ung Sim ◽  
Seung Wook Shin ◽  
A.V. Moholkar ◽  
Jae Ho Yun ◽  
Jong Ha Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sputtering System

CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 667-670 ◽  
Author(s):  
Y. RODRÍGUEZ-LAZCANO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Band Gap ◽  
Deposition Method ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Ternary Compounds ◽  
Glass Substrates ◽  
Different Temperatures

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

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