Highly ordered CdS nanoparticle arrays on silicon substrates and photoluminescence properties

Silicon oxycarbide ( SiCO ) thin films were prepared by the RF reactive sputtering technique on n-type silicon substrates with the target of sintered silicon carbide ( SiC ), and high purity oxygen was used as the reactant gas. The as-deposited films were annealed at temperatures of 600°C, 800°C, and 1000°C under nitrogen ambient, respectively. The films were characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction and photoluminescence (PL) spectrophotometer. The results show that annealing temperature plays an important role in the structure and photoluminescence of the films. The temperature 600°C is the most favorable annealing temperature for SiO 2 crystallization and the formation of 6H- SiC crystal phase in the SiCO films. The intense PL peaks located at 375 nm and 470 nm are observed at room temperature. The origin of the PL was discussed.

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Controlled preparation of CdS nanoparticle arrays in amphiphilic perylene tetracarboxylic diimides: organization, electron-transfer and semiconducting properties

CrystEngComm ◽

10.1039/c3ce41977k ◽

2014 ◽

Vol 16 (7) ◽

pp. 1277 ◽

Cited By ~ 19

Author(s):

Jingang Song ◽

Qingwen Tian ◽

Jian Gao ◽

Haixia Wu ◽

Yanli Chen ◽

...

Keyword(s):

Electron Transfer ◽

Nanoparticle Arrays ◽

Semiconducting Properties ◽

Cds Nanoparticle ◽

Controlled Preparation

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Probing Photoelectrochemical Processes in Au−CdS Nanoparticle Arrays by Surface Plasmon Resonance: Application for the Detection of Acetylcholine Esterase Inhibitors

Journal of the American Chemical Society ◽

10.1021/ja0379215 ◽

2003 ◽

Vol 125 (51) ◽

pp. 16006-16014 ◽

Cited By ~ 137

Author(s):

Maya Zayats ◽

Andrei B. Kharitonov ◽

Svetlana P. Pogorelova ◽

Oleg Lioubashevski ◽

Eugenii Katz ◽

...

Keyword(s):

Surface Plasmon Resonance ◽

Surface Plasmon ◽

Plasmon Resonance ◽

Acetylcholine Esterase ◽

Nanoparticle Arrays ◽

Acetylcholine Esterase Inhibitors ◽

Esterase Inhibitors ◽

Cds Nanoparticle

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Comparative Study of Photoluminescence in Silicon and Zinc Oxide Nanowires

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.222.189 ◽

2011 ◽

Vol 222 ◽

pp. 189-192

Author(s):

G.Y. Rudko ◽

A.I. Klimovskaya

Keyword(s):

Comparative Study ◽

Self Assembly ◽

Semiconductor Nanowires ◽

Silicon Substrates ◽

Photoluminescence Properties ◽

Oxide Nanowires ◽

Crystalline Core ◽

Sem Study ◽

Assembly Technique ◽

The Comparative Study

The comparative study of indirect and direct gap (Si and ZnO, respectively) semiconductor nanowires (NWs) is reported. The NWs were grown on silicon substrates by gold-assisted self-assembly technique. SEM study demonstrated high-density of nanowires. HRTEM studies show that both types of NWs (Si and ZnO) are the naturally-grown heterostructures consisting of crystalline core and envelope. The variation of photoluminescence properties of NWs with cross section and/or the material of the samples is analyzed.

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