Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport

2006 ◽  
Vol 89 (7) ◽  
pp. 073507 ◽  
Author(s):  
H. Lin ◽  
S. Tiwari
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Effect Transistor

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

2019 ◽  
Vol 28 (8) ◽  
pp. 086801 ◽  
Author(s):  
Wen-Ting Zhang ◽  
Fen-Xia Wang ◽  
Yu-Miao Li ◽  
Xiao-Xing Guo ◽  
Jian-Hong Yang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Floating Gate ◽  
Organic Field Effect Transistor ◽  
Floating Gate Memory ◽  
Effect Transistor

Understanding charge trapping/detrapping at the zinc oxide (ZnO)/MAPbI3 perovskite interface in the dark and under illumination using a ZnO/perovskite/ZnO test platform

Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20377-20383 ◽  
Author(s):  
Youngjun Kim ◽  
Byoungnam Park
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Lead Iodide ◽  
Test Platform ◽  
Interfacial Contact ◽  
Effect Transistor ◽  
Methylammonium Lead Iodide

We fabricated a zinc oxide (ZnO)/methylammonium lead iodide (MAPbI3) perovskite/ZnO field effect transistor (FET) test platform device through which ZnO/perovskite interfacial contact properties can be probed in the dark and under illumination.

Filter-Free Selective Light Monitoring by Organic Field-Effect Transistor Memories with a Tunable Blend Charge-Trapping Layer

2019 ◽  
Vol 11 (43) ◽  
pp. 40366-40371 ◽  
Author(s):  
Lin-Xi Zhang ◽  
Xu Gao ◽  
Jing-Jing Lv ◽  
Ya-Nan Zhong ◽  
Chao Xu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation

2013 ◽  
Vol 103 (5) ◽  
pp. 053118 ◽  
Author(s):  
Yi-Ruei Jhan ◽  
Yung-Chun Wu ◽  
Hsin-Yi Lin ◽  
Min-Feng Hung
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Effect Transistor ◽  
Gate Tunneling

Self-Boosted Tunnel Field-Effect Transistor Using Nitride Charge Trapping Layer for Low Supply Voltage Operation

2016 ◽  
Vol 16 (5) ◽  
pp. 5243-5246 ◽  
Author(s):  
Hyungjin Kim ◽  
Dae Woong Kwon ◽  
Min-Woo Kwon ◽  
Jungjin Park ◽  
Byung-Gook Park
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Supply Voltage ◽  
Charge Trapping ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Low Supply Voltage

Metal nanoparticles in organic field-effect transistor: Transition from charge trapping to conduction mechanism

2014 ◽  
Vol 554 ◽  
pp. 189-193 ◽  
Author(s):  
Keanchuan Lee ◽  
Martin Weis ◽  
Xiangyu Chen ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
...  
Keyword(s):  
Metal Nanoparticles ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Conduction Mechanism ◽  
Charge Trapping ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

scholarly journals Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 753
Author(s):  
Wenting Zhang ◽  
Xiaoxing Guo ◽  
Jinchao Yin ◽  
Jianhong Yang
Keyword(s):  
Quantum Dots ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Dielectric Materials ◽  
Memory Device ◽  
Carbon Quantum Dots ◽  
Polyvinyl Pyrrolidone ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ± 60 V and a retention time of up to 104 s.

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