Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers

2007 ◽  
Vol 90 (20) ◽  
pp. 202102 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Chang Yong Kang ◽  
Ji-Woon Yang ◽  
Hsing-Huang Tseng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Epitaxial Layers ◽  
High K ◽  
Thermal Stability Of

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics

2019 ◽  
Vol 35 (3) ◽  
pp. 325-332 ◽  
Author(s):  
T. Das ◽  
Chandreswar Mahata ◽  
G Sutradhar ◽  
P K Bose ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Semiconductor Device ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K

Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

2007 ◽  
Vol 90 (13) ◽  
pp. 132101 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Cheng Wang ◽  
Tien-Ko Wang ◽  
Chuen-Horng Tsai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Nitrogen Content ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of
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