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Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces
Applied Physics Letters
◽
10.1063/1.4882643
◽
2014
◽
Vol 104
(23)
◽
pp. 232104
◽
Cited By ~ 14
Author(s):
Noriyuki Miyata
◽
Akihiro Ohtake
◽
Masakazu Ichikawa
◽
Takahiro Mori
◽
Tetsuji Yasuda
Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Electrical Characteristics
◽
Thermal Stability Of
Download Full-text
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Electrical characteristics and thermal stability of n[sup +] polycrystalline- Si/ZrO[sub 2]/SiO[sub 2]/Si metal–oxide–semiconductor capacitors
Journal of Applied Physics
◽
10.1063/1.1425073
◽
2002
◽
Vol 91
(1)
◽
pp. 414
◽
Cited By ~ 38
Author(s):
Kwan-Yong Lim
◽
Dae-Gyu Park
◽
Heung-Jae Cho
◽
Joong-Jung Kim
◽
Jun-Mo Yang
◽
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Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Electrical Characteristics
◽
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Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.02ba02
◽
2012
◽
Vol 51
(2)
◽
pp. 02BA02
Author(s):
Hong-Sik Shin
◽
Se-Kyung Oh
◽
Min-Ho Kang
◽
Hyuk-Min Kwon
◽
Jungwoo Oh
◽
...
Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Field Effect
◽
High Performance
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Thermal Stability Of
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Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes
Journal of Applied Physics
◽
10.1063/1.2901016
◽
2008
◽
Vol 103
(7)
◽
pp. 073702
◽
Cited By ~ 4
Author(s):
M. Ťapajna
◽
A. Rosová
◽
E. Dobročka
◽
V. Štrbík
◽
Š. Gaži
◽
...
Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Work Function
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Electrodes
◽
Effect Transistor
◽
Thermal Stability Of
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Study on Thermal Stability of Plasma-PH[sub 3] Passivated HfAlO/In[sub 0.53]Ga[sub 0.47]As Gate Stack for Advanced Metal-Oxide-Semiconductor Field Effect Transistor
Electrochemical and Solid-State Letters
◽
10.1149/1.3465300
◽
2010
◽
Vol 13
(10)
◽
pp. H336
◽
Cited By ~ 6
Author(s):
Sumarlina Azzah Suleiman
◽
H. J. Oh
◽
A. Du
◽
C. M. Ng
◽
S. J. Lee
Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stack
◽
Effect Transistor
◽
Thermal Stability Of
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Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers
Applied Physics Letters
◽
10.1063/1.2740108
◽
2007
◽
Vol 90
(20)
◽
pp. 202102
◽
Cited By ~ 18
Author(s):
Jungwoo Oh
◽
Prashant Majhi
◽
Chang Yong Kang
◽
Ji-Woon Yang
◽
Hsing-Huang Tseng
◽
...
Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Gate Dielectrics
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Epitaxial Layers
◽
High K
◽
Thermal Stability Of
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Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy
Journal of Applied Physics
◽
10.1063/1.1809769
◽
2004
◽
Vol 96
(11)
◽
pp. 6362-6369
◽
Cited By ~ 36
Author(s):
N. Barrett
◽
O. Renault
◽
J.-F. Damlencourt
◽
F. Martin
Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Valence Band
◽
Photoelectron Spectroscopy
◽
Complementary Metal Oxide Semiconductor
◽
Gate Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
X Ray
◽
Thermal Stability Of
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Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices
Applied Physics Letters
◽
10.1063/1.2716311
◽
2007
◽
Vol 90
(13)
◽
pp. 132101
◽
Cited By ~ 2
Author(s):
Ping-Hung Tsai
◽
Kuei-Shu Chang-Liao
◽
Tzu-Cheng Wang
◽
Tien-Ko Wang
◽
Chuen-Horng Tsai
◽
...
Keyword(s):
Thermal Stability
◽
Metal Oxide
◽
Work Function
◽
Nitrogen Content
◽
Semiconductor Devices
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Thermal Stability Of
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Thermal Stability and Electrical Characteristics of Tungsten Nitride Gates in Metal–Oxide–Semiconductor Devices
Japanese Journal of Applied Physics
◽
10.1143/jjap.47.872
◽
2008
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Vol 47
(2)
◽
pp. 872-878
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Cited By ~ 11
Author(s):
Chih-Feng Huang
◽
Bing-Yue Tsui
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Chih-Hsun Lu
Keyword(s):
Thermal Stability
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Metal Oxide
◽
Semiconductor Devices
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Tungsten Nitride
◽
Electrical Characteristics
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Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application
Applied Physics Letters
◽
10.1063/1.1477266
◽
2002
◽
Vol 80
(18)
◽
pp. 3385-3387
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Cited By ~ 26
Author(s):
Hyo Sik Chang
◽
Sanghun Jeon
◽
Hyunsang Hwang
◽
Dae Won Moon
Keyword(s):
Thermal Stability
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Metal Oxide
◽
Gate Dielectrics
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Excellent Thermal Stability
◽
Thermal Stability Of
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Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices
Journal of Applied Physics
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10.1063/1.5008515
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pp. 035101
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Author(s):
Oren Zonensain
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Sivan Fadida
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Ilanit Fisher
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Juwen Gao
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Keyword(s):
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Metal Oxide
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Semiconductor Devices
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Atomic Layer
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Thermal Stability Of
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