Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide

2007 ◽  
Vol 102 (10) ◽  
pp. 104503 ◽  
Author(s):  
Susanne Scheinert ◽  
Kurt P. Pernstich ◽  
Bertram Batlogg ◽  
Gernot Paasch
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Current Characteristics ◽  
Surface Modified

scholarly journals Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Computer Aided Design ◽  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Test Method ◽  
Current Path ◽  
Simulation Results ◽  
Current Characteristics ◽  
Aided Design

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

Self-Assembled Dipoles of o-Carborane on Gate Oxide Tuning Charge Carriers in Organic Field Effect Transistors

2021 ◽  
Author(s):  
Ming Chu ◽  
Jie Zhang ◽  
Xingwei Zeng ◽  
Zefeng Chen ◽  
Danqing Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Charge Carriers ◽  
Acid Form ◽  
Organic Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...

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