Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Applied Physics Letters ◽

10.1063/1.2823606 ◽

2007 ◽

Vol 91 (24) ◽

pp. 243505 ◽

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Lap Chan ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistor ◽

Device Physics ◽

Double Gate ◽

Effect Transistor ◽

Guiding Principles ◽

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Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Applied Physics Letters ◽

10.1063/1.2748366 ◽

2007 ◽

Vol 90 (26) ◽

pp. 263507 ◽

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Film Thickness ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Film ◽

Device Physics ◽

Double Gate ◽

Thickness Optimization ◽

Effect Transistor ◽

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A Double-Gate Tunneling Field-Effect Transistor with Silicon-Germanium Source for High-Performance, Low Standby Power, and Low Power Technology Applications

10.7567/ssdm.2007.b-9-5 ◽

2007 ◽

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Lap Chan ◽

Dennis Sylvester ◽

Chun-Huat Heng ◽

...

Keyword(s):

Low Power ◽

Silicon Germanium ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Double Gate ◽

Technology Applications ◽

Standby Power ◽

Effect Transistor ◽

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Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2593 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2593-2597 ◽

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Lap Chan ◽

Dennis Sylvester ◽

Chun-Huat Heng ◽

...

Keyword(s):

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Device Design ◽

Effect Transistor ◽

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Study on the novel double-gate tunneling field-effect transistor with InAs source

Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering ◽

10.2991/iccmcee-15.2015.280 ◽

2015 ◽

Author(s):

YueHua Dai ◽

Ning Li ◽

Zhen Chen ◽

Bo Jin

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

The Novel ◽

Effect Transistor ◽

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An empirical model for static I–V characteristics of double gate tunneling field effect transistor

2013 IEEE 10th International Conference on ASIC ◽

10.1109/asicon.2013.6811948 ◽

2013 ◽

Author(s):

D. M. Huang ◽

C. J. Yao ◽

D. H. Shi ◽

M. F. Li

Keyword(s):

Empirical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Rigorous Study of Double Gate Tunneling Field Effect Transistor Structure Based on Silicon

Materials Focus ◽

10.1166/mat.2018.1600 ◽

2018 ◽

Vol 7 (6) ◽

pp. 866-872 ◽

Author(s):

N. Guenifi ◽

S. B. Rahi ◽

T. Ghodbane

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Transistor Structure ◽

Rigorous Study ◽

Effect Transistor ◽

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Numerical simulation on novel nano-scale lateral double-gate tunneling field effect transistor

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424618 ◽

2010 ◽

Author(s):

Frank He ◽

Haijun Lou ◽

Wang Zhou ◽

Lin Chen ◽

Yiwen Xu ◽

...

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DG-TFET) Using Carrier Concentration Approach

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2013.2829 ◽

2013 ◽

Vol 10 (5) ◽

pp. 1202-1208 ◽

Author(s):

Rakhi Narang ◽

Manoj Saxena ◽

R. S. Gupta ◽

Mridula Gupta

Keyword(s):

Carrier Concentration ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

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Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System

Electrical and Electronic Devices, Circuits, and Materials ◽

10.1002/9781119755104.ch2 ◽

2021 ◽

pp. 19-36

Author(s):

Guenifi Naima ◽

Shiromani Balmukund Rahi

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Power Circuit ◽

Ultra Low Power ◽

Design And Optimization ◽

Effect Transistor ◽

Circuit And System ◽

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Switching Performance Enhancement in Nanotube Double-Gate Tunneling Field-Effect Transistor With Germanium Source Regions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3124984 ◽

2021 ◽

pp. 1-6

Author(s):

Iman Chahardah Cherik ◽

Saeed Mohammadi ◽

Ali Asghar Orouji

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Double Gate ◽

Switching Performance ◽

Source Regions ◽

Effect Transistor ◽

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