Diode-pumped polymeric dye lasers operating at a pump power level of 10mW

For the first time, a diode-pumped actively Q-switched Nd:YVO4/RbTiOPO4 (RTP) intracavity Raman laser at 1.49 µm was demonstrated to the best of our knowledge. Experimentally, a dual-end diffusion-bonded YVO4–Nd:YVO4–YVO4 crystal was employed as the laser medium to generate 1.34 µm laser radiation, and an RTP crystal as the Raman medium to enable the frequency conversion, by which radiation at 1.49 µm was achieved successfully. With an incident pump power of 10.4 W, an average output power of 502 mW was obtained at a pulse repetition rate of 15 kHz, corresponding to a conversion efficiency of 4.8%.

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Optical Channel Capacity Upgrade Based on Multiwavelength Conversion XGM Using Semiconductor Optical Amplifier for Access Networks

International Journal of Optics ◽

10.1155/2017/3195383 ◽

2017 ◽

Vol 2017 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Mohammad Syuhaimi Ab-rahman ◽

Abdul Hameed Almabrok Swedan

Keyword(s):

Pump Power ◽

Wavelength Conversion ◽

Power Level ◽

Optical Amplifier ◽

Access Networks ◽

Optical Channel ◽

Wavelength Converter ◽

Acceptable Result ◽

Channel Response ◽

Point To Point

This paper demonstrates a 10 Gb/s one-to-two-wavelength conversion configuration based on cross-gain modulation for optical access networks using a single TW-SOA. The method is capable of converting a signal data of specific wavelength 1541 nm to certain wavelengths of CW’s laser 1554 nm and 1558 nm with 4 nm spacing. The pump power level was classified due to channel response. A result obtained was the best power level offering wavelength converter between −6 and 3 dBm. The conversion efficiency achievement provided an acceptable result for probe signals. The findings ofQ-factor performance were investigated. TheQvalues were found to be more than 9 for point to point transmission and 20 km fiber configurations for the original and converted signal. The technique implemented at 20 km and the power of all channels were adequate to provide a splitting ratio of 1/64 for the launched pump power 3 dBm.

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Diode-Pumped Eye-Safe Intracavity Raman Laser with Ceramic Nd:YAG Gain Medium and BaWO4 Raman Crystal

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.531.181 ◽

2012 ◽

Vol 531 ◽

pp. 181-184

Author(s):

Hui Hua Xu ◽

Xing Yu Zhang ◽

Qing Pu Wang ◽

Xiao Han Chen ◽

Cong Wang ◽

...

Keyword(s):

Pump Power ◽

Output Power ◽

Pulse Repetition Frequency ◽

Raman Laser ◽

Gain Medium ◽

Repetition Frequency ◽

Pulse Repetition ◽

Average Output ◽

Diode Pumped ◽

First Time

A diode-pumped actively Q-switched eye-safe intracavity Raman laser with ceramic Nd:YAG gain medium and BaWO4 Raman crystal is demonstrated for the first time. The highest average output power of 0.76 W is obtained at a pulse repetition frequency of 30 kHz and a pump power of 11.3 W. The corresponding conversion efficiency from the diode pump power to Raman output power is 6.7%. The highest pulse energy of 38.1 µJ is obtained at a pulse repetition frequency of 15 kHz and a pump power of 7.8 W, and the corresponding peak power is 4.9 kW.

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High power continuous-wave 1064 nm DPSS laser for machining semiconductor and metal materials

Science and Technology Development Journal ◽

10.32508/stdj.v16i1.1417 ◽

2013 ◽

Vol 16 (1) ◽

pp. 37-47

Author(s):

Khoa Thanh Nhat Phan ◽

Chien Mau Dang

Keyword(s):

Solid State ◽

Pump Power ◽

Active Medium ◽

High Power ◽

Slope Efficiency ◽

Continuous Wave ◽

Laser System ◽

Anisotropic Crystal ◽

Diode Pumped ◽

Metal Materials

A diode-pumped solid-state (DPSSL) laser system with 808 nm laser as pump source has been developed successfully. We used the optically anisotropic crystal Nd:YVO4 as the active medium. The threshold pump power and slope efficiency were measured and discussed. With lowly doped crystal Nd:YVO4 0.27% and concave-plane cavity, the laser showed good performance in the pumping range up to 11 W. Using the 1064 nm beam, micromachining were successfully conducted upon some normal materials such as plastic, wood; some semiconductors such as silicon and metals such as aluminum, copper, steel.

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Photonic Crystal Polymeric Thin-Film Dye-Lasers for Attachable Strain Sensors

Sensors ◽

10.3390/s21165331 ◽

2021 ◽

Vol 21 (16) ◽

pp. 5331

Author(s):

Tsan-Wen Lu ◽

Yu-Kai Feng ◽

Huan-Yeuh Chu ◽

Po-Tsung Lee

Keyword(s):

Thin Film ◽

Strain Sensors ◽

Dye Lasers ◽

Strain Sensing ◽

One Dimensional ◽

Scale Thickness ◽

Polymeric Thin Film ◽

Wavelength Scale ◽

Polymeric Dye

In this report, using two-dimensional photonic crystals (PhC) and a one-dimensional PhC nano-beam cavity, we realized the development of all-polymeric dye-lasers on a dye-doped, suspended poly-methylmethacrylate film with a wavelength-scale thickness. In addition to the characterization of basic lasing properties, we also evaluated its capacity to serve as an attachable strain sensor. Through experimentation, we confirmed the stable lasing performances of the dye-laser attaching on a rough surface. Moreover, we also theoretically studied the wavelength responses of the utilized PhC resonators to stretching strain and further improved them via the concept of strain shaping. The attachability and high strain sensing response of the presented thin film PhC dye-lasers demonstrate their potential as attachable strain sensors.

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