Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

2008 ◽  
Vol 93 (4) ◽  
pp. 042102 ◽  
Author(s):  
Chanwoo Park ◽  
Sang Ho Jeon ◽  
Seung Chul Chae ◽  
Seungwu Han ◽  
Bae Ho Park ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Structural Defects ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

2009 ◽  
Vol 94 (24) ◽  
pp. 242902 ◽  
Author(s):  
Kazuki Nagashima ◽  
Takeshi Yanagida ◽  
Keisuke Oka ◽  
Tomoji Kawai
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Room Temperature ◽  
Sno2 Thin Films ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

2013 ◽  
Vol 1562 ◽  
Author(s):  
P. Misra ◽  
S. P. Pavunny ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
Temperature Dependent ◽  
Memory Switching ◽  
Ohmic Behavior ◽  
Nonvolatile Memories ◽  
Frenkel Emission ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM

2013 ◽  
Vol 721 ◽  
pp. 194-198 ◽  
Author(s):  
Jun Hua Xi ◽  
Xue Ping Chen ◽  
Hong Xia Li ◽  
Jun Zhang ◽  
Zhen Guo Ji
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Zno Thin Films ◽  
Forming Process ◽  
Heavily Doped ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

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