Plastic deformation and optical behavior of high-purity synthetic diamond crystal subjected to high stress load at room temperature

2008 ◽  
Vol 93 (10) ◽  
pp. 101915 ◽  
Author(s):  
H. Sumiya ◽  
Y. Nakamoto ◽  
K. Shimizu ◽  
H. Kanda
1997 ◽  
Vol 178 (4) ◽  
pp. 485-494 ◽  
Author(s):  
H. Sumiya ◽  
N. Toda ◽  
Y. Nishibayashi ◽  
S. Satoh

2006 ◽  
Vol 56 (12) ◽  
pp. 711-715 ◽  
Author(s):  
Masahiro JOTOKU ◽  
Atsushi YAMAMOTO ◽  
Harushige TSUBAKINO

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 948 ◽  
Author(s):  
Daniel Blaschke

It is well known that, under plastic deformation, dislocations are not only created but also move through the crystal, and their mobility is impeded by their interaction with the crystal structure. At high stress and temperature, this “drag” is dominated by phonon wind, i.e., phonons scattering off dislocations. Employing the semi-isotropic approach discussed in detail in a previous paper (J. Phys. Chem. Solids 2019, 124, 24–35), we discuss here the approximate functional dependence of dislocation drag B on dislocation velocity in various regimes between a few percent of transverse sound speed c T and c T (where c T is the effective average transverse sound speed of the polycrystal). In doing so, we find an effective functional form for dislocation drag B ( v ) for different slip systems and dislocation characters at fixed (room) temperature and low pressure.


Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.


Nanophotonics ◽  
2020 ◽  
Vol 9 (14) ◽  
pp. 4233-4252
Author(s):  
Yael Gutiérrez ◽  
Pablo García-Fernández ◽  
Javier Junquera ◽  
April S. Brown ◽  
Fernando Moreno ◽  
...  

AbstractReconfigurable plasmonics is driving an extensive quest for active materials that can support a controllable modulation of their optical properties for dynamically tunable plasmonic structures. Here, polymorphic gallium (Ga) is demonstrated to be a very promising candidate for adaptive plasmonics and reconfigurable photonics applications. The Ga sp-metal is widely known as a liquid metal at room temperature. In addition to the many other compelling attributes of nanostructured Ga, including minimal oxidation and biocompatibility, its six phases have varying degrees of metallic character, providing a wide gamut of electrical conductivity and optical behavior tunability. Here, the dielectric function of the several Ga phases is introduced and correlated with their respective electronic structures. The key conditions for optimal optical modulation and switching for each Ga phase are evaluated. Additionally, we provide a comparison of Ga with other more common phase-change materials, showing better performance of Ga at optical frequencies. Furthermore, we first report, to the best of our knowledge, the optical properties of liquid Ga in the terahertz (THz) range showing its broad plasmonic tunability from ultraviolet to visible-infrared and down to the THz regime. Finally, we provide both computational and experimental evidence of extension of Ga polymorphism to bidimensional two-dimensional (2D) gallenene, paving the way to new bidimensional reconfigurable plasmonic platforms.


2021 ◽  
Vol 807 ◽  
pp. 140821
Author(s):  
Kai Zhang ◽  
Zhutao Shao ◽  
Christopher S. Daniel ◽  
Mark Turski ◽  
Catalin Pruncu ◽  
...  

2008 ◽  
Vol 368-372 ◽  
pp. 683-685
Author(s):  
Cheng Wei Hao ◽  
Bo Lin Wu ◽  
Ji Yan Li

Ammonium aluminium carbonate hydroxide (AACH), with a small quantity of γ-AlOOH, was synthesized through solid-state reaction at room temperature using AlCl3·6H2O and NH4HCO3 as raw materials and polyethylene glycol (PEG-10000) as the dispersant. After calcined at 1100°C for 1.5h, α-Al2O3 powders with primary particle sizes of 20~30nm were obtained. The crystal phase, particle size and morphology of the high-purity ultrafine α-Al2O3 were characterized. The results showed that a small quantity of γ-AlOOH in the AACH decomposed and formed crystal seeds. The presence of crystal seeds reduced the nucleation activation energy and therefore reduced the phase transformation temperature.


2016 ◽  
Vol 78 (6-9) ◽  
Author(s):  
Intan Fadhlina Mohamed ◽  
Seungwon Lee ◽  
Kaveh Edalati ◽  
Zenji Horita ◽  
Shahrum Abdullah ◽  
...  

This work presents a study related to the grain refinement of an aluminum A2618 alloy achieved by High-Pressure Torsion (HPT) known as a process of Severe Plastic Deformation (SPD). The HPT is conducted on disks of the alloy under an applied pressure of 6 GPa for 1 and 5 turns with a rotation speed of 1 rpm at room temperature. The HPT processing leads to microstructural refinement with an average grain size of ~250 nm at a saturation level after 5 turns. Gradual increases in hardness are observed from the beginning of straining up to a saturation level. This study thus suggests that hardening due to grain refinement is attained by the HPT processing of the A2618 alloy at room temperature.


1976 ◽  
Vol 10 (2) ◽  
pp. 189-194 ◽  
Author(s):  
Nahum Nir ◽  
Edward W. Hart ◽  
Che-Yu Li

Sign in / Sign up

Export Citation Format

Share Document