Electrical characterization of an inductively coupled gaseous electronics conference reference cell

2008 ◽  
Vol 104 (8) ◽  
pp. 083303 ◽  
Author(s):  
S. V. Singh ◽  
C. Pargmann
2010 ◽  
Vol 108 (8) ◽  
pp. 083302 ◽  
Author(s):  
Satomi Tajima ◽  
Masashi Matsumori ◽  
Shigeki Nakatsuka ◽  
Shouichi Tsuchiya ◽  
Takanori Ichiki

2019 ◽  
Vol 14 (1) ◽  
pp. 365-373
Author(s):  
Andre M. Daltrini ◽  
Stanislav A. Moshkalev ◽  
Thomas Morgan ◽  
Robert Piejak ◽  
William Graham

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.


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