scholarly journals Syntheses of dibenzo[d,d']benzo[2,1-b:3,4-b']difuran derivatives and their application to organic field-effect transistors

2016 ◽  
Vol 12 ◽  
pp. 805-812 ◽  
Author(s):  
Minh Anh Truong ◽  
Koji Nakano

Ladder-type π-conjugated compounds containing a benzo[2,1-b:3,4-b']difuran skeleton, such as dibenzo[d,d']benzo[2,1-b:3,4-b']difuran (syn-DBBDF) and dinaphtho[2,3-d:2',3'-d']benzo[2,1-b:3,4-b']difuran (syn-DNBDF) were synthesized. Their photophysical and electrochemical properties were revealed by UV–vis absorption and photoluminescence spectroscopy and cyclic voltammetry. Organic field-effect transistors (OFETs) were fabricated with these compounds as organic semiconductors, and their semiconducting properties were evaluated. OFETs with syn-DBBDF and syn-DNBDF showed typical p-type characteristics with hole mobilities of <1.5 × 10−3 cm2·V−1·s−1 and <1.0 × 10−1 cm2·V−1·s−1, respectively.

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...


Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.


2020 ◽  
Vol 8 (44) ◽  
pp. 15759-15770
Author(s):  
Alexandra Harbuzaru ◽  
Iratxe Arrechea-Marcos ◽  
Alberto D. Scaccabarozzi ◽  
Yingfeng Wang ◽  
Xugang Guo ◽  
...  

Different charge transport mechanisms at the device interface are found for a series of ladder-type semiconductors with increasing chain length.


2018 ◽  
Vol 42 (19) ◽  
pp. 16384-16384
Author(s):  
Qian Liu ◽  
Huabin Sun ◽  
Chula Blaikie ◽  
Chiara Caporale ◽  
Sergei Manzhos ◽  
...  

Correction for ‘Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors’ by Qian Liu et al., New J. Chem., 2018, 42, 12374–12385.


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