AbstractWe have employed a triode-type plasma CVD system to fabricate highly stabilized hydrogenated amorphous silicon (a-Si:H) solar cells. The p-i-n type solar cells were fabricated on a textured SnO2/glass substrate (ASAHI VU type). By applying a triode system, the Si-H2 bond density in the film decreased to about one third (from 1.7 at.% for conventional parallel-plate-electrode to 0.6 at.% for a triode configuration), and correspondingly the degradation ratio decreased from 13 % to 10 %. We have achieved the degradation ratio of 5 % by optimizing the player deposition conditions. In case of a triode system, there were minor effects of higher hydrogen dilution in the stabilized efficiency. We have experimented the effects of the substrate temperature for a higher stabilized efficiency. Further improvement in solar efficiency has been made by applying antireflection layers to air/glass and TCO/p interfaces. As a result, we have achieved the stabilized efficiency of 9.22 % (Jsc = 15.9 mA/cm2, Voc = 0.863 V, FF = 0.672) with a degradation ratio of 7.8 %. We have also employed the triode-deposited a-Si:H solar cell to a tandem type solar cell with a structure of a-Si:H/hydrogenated microcrystalline silicon (μc-Si:H). We have achieved the stabilized efficiency of 10.9 % (Jsc = 12.0 mA/cm2, Voc = 1.31 V, FF = 0.691) with a degradation ratio of 7.3 %.
Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon
