The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposition

2010 ◽  
Vol 96 (24) ◽  
pp. 243308 ◽  
Author(s):  
J. Meyer ◽  
H. Schmidt ◽  
W. Kowalsky ◽  
T. Riedl ◽  
A. Kahn
2006 ◽  
Vol 89 (3) ◽  
pp. 031915 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
M. D. Groner ◽  
S. M. George

2017 ◽  
Vol 9 (7) ◽  
pp. 168781401771180 ◽  
Author(s):  
Fa-Ta Tsai ◽  
Ching-Kong Chao ◽  
Kai-Jyun Jhong ◽  
Rwei-Ching Chang

Atomic layer deposition has become an important thin-film growth technique for producing gas diffusion barriers because of its low process temperature and its ability to produce uniform films. In this work, atomic layer deposition was used to deposit various Al2O3 and ZnO thin films on polyethylene terephthalate substrates; subsequently, the physical properties and water vapor transmission rates of the films were characterized. Single and hybrid films (Al2O3, ZnO, Al2O3/ZnO, and ZnO/Al2O3) with thicknesses of 25, 50, and 100 nm at a deposition temperature of 60°C were investigated. The deposited films were characterized for surface roughness, optical transmittance, adhesion, water vapor transmission rate, and contact angle. The results showed that the double-layer structure provided a higher water vapor transmission rate and higher adhesion strength than those of the single-layer structure although both the surface roughness and optical transmittance of the single-layer structure were slightly better than those of the double-layer structure. The results revealed that the atomic layer deposition-grown hybrids could act as water vapor barriers.


2006 ◽  
Vol 88 (5) ◽  
pp. 051907 ◽  
Author(s):  
M. D. Groner ◽  
S. M. George ◽  
R. S. McLean ◽  
P. F. Carcia

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5601-5609 ◽  
Author(s):  
Kwan Hyuck Yoon ◽  
Hongbum Kim ◽  
Yong-Eun Koo Lee ◽  
Nabeen K. Shrestha ◽  
Myung Mo Sung

We present UV-ALD as a promising approach to fabricate effective gas-diffusion barrier thin films at low deposition temperature (40 °C).


2011 ◽  
Vol 98 (10) ◽  
pp. 102905 ◽  
Author(s):  
In-Sung Park ◽  
Youngjae Choi ◽  
William T. Nichols ◽  
Jinho Ahn

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