Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

Applied Physics Letters ◽

10.1063/1.3491292 ◽

2010 ◽

Vol 97 (13) ◽

pp. 132908 ◽

Author(s):

X. H. Zheng ◽

A. P. Huang ◽

Z. S. Xiao ◽

Z. C. Yang ◽

M. Wang ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

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Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.056 ◽

2013 ◽

Vol 109 ◽

pp. 160-162 ◽

Author(s):

Seok-Hee Lee ◽

Rino Choi ◽

Changhwan Choi

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Equivalent Oxide Thickness ◽

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Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

Applied Physics Letters ◽

10.1063/1.4936991 ◽

2015 ◽

Vol 107 (22) ◽

pp. 223504 ◽

Author(s):

Abhitosh Vais ◽

Jacopo Franco ◽

Han-Chung Lin ◽

Nadine Collaert ◽

Anda Mocuta ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Defect Characterization ◽

Flat Band Voltage ◽

High K ◽

Capacitance Voltage ◽

Voltage Hysteresis

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Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks

Journal of Applied Physics ◽

10.1063/1.5031025 ◽

2018 ◽

Vol 124 (22) ◽

pp. 224102 ◽

Author(s):

S. M. Pazos ◽

F. L. Aguirre ◽

K. Tang ◽

P. McIntyre ◽

F. Palumbo

Keyword(s):

Metal Oxide ◽

Frequency Dispersion ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

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Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

2012 12th International Workshop on Junction Technology ◽

10.1109/iwjt.2012.6212837 ◽

2012 ◽

Author(s):

Xiaolei Wang ◽

Wenwu Wang ◽

Kai Han ◽

Hong Yang ◽

Jing Zhang ◽

...

Keyword(s):

Band Structure ◽

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Dependence of flat‐band voltage of metal‐oxide semiconductor structures on phosphosilicate‐glass growing conditions

Applied Physics Letters ◽

10.1063/1.91833 ◽

1980 ◽

Vol 37 (2) ◽

pp. 226-228

Author(s):

G. Masetti ◽

M. Severi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Semiconductor Structures ◽

Phosphosilicate Glass ◽

Growing Conditions

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Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo–metal–oxide–semiconductor field effect transistors by adsorption and reaction events

Journal of Applied Physics ◽

10.1063/1.3583559 ◽

2011 ◽

Vol 109 (10) ◽

pp. 104904 ◽

Author(s):

Girjesh Dubey ◽

Federico Rosei ◽

Gregory P. Lopinski

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061503 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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