Wear of sputter deposited refractory-metal nitride coatings

ABSTRACTRaman scattering measurements are used to distinguish between amorphous and crystalline phases in sputter deposited boron nitride coatings and bulk materials. Changes in vibrational line frequency and linewidth can be attributed to differences in particle size or inherent strain which can be quantified from pressure-dependent measurements of the bulk material. The response of the Raman-allowed E2g modes (hexagonal phase) to temperature is described by a forced dampeg harmonic oscillator model from which the intra- and interplanar lattice thermal expansion can be estimated.

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The sulfidation and oxidation behavior of sputter-deposited Cr-refractory metal alloys at high temperatures

Materials Science and Engineering A ◽

10.1016/s0921-5093(96)10817-0 ◽

1997 ◽

Vol 226-228 ◽

pp. 910-914 ◽

Cited By ~ 5

Author(s):

K. Ito ◽

H. Habazaki ◽

H. Mitsui ◽

E. Akiyama ◽

A. Kawashima ◽

...

Keyword(s):

High Temperatures ◽

Refractory Metal ◽

Oxidation Behavior ◽

Metal Alloys ◽

Sputter Deposited ◽

Refractory Metal Alloys

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Structural analysis of Arc-PVD multilayer metal nitride coatings CrN/MoN using electron backscatter diffraction (EBSD)

2016 International Conference on Nanomaterials: Application & Properties (NAP) ◽

10.1109/nap.2016.7757249 ◽

2016 ◽

Author(s):

B. O. Postolnyi ◽

J. P. Araujo

Keyword(s):

Structural Analysis ◽

Electron Backscatter Diffraction ◽

Metal Nitride ◽

Nitride Coatings ◽

Electron Backscatter ◽

Backscatter Diffraction ◽

Multilayer Metal

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Laser Processed Silicides for GaAs Hemts

MRS Proceedings ◽

10.1557/proc-158-261 ◽

1989 ◽

Vol 158 ◽

Cited By ~ 1

Author(s):

W.T. Anderson ◽

A. Christou ◽

P.E. Thompson ◽

J.L. Davis ◽

C.R. Gossett ◽

...

Keyword(s):

Excimer Laser ◽

Refractory Metal ◽

Ohmic Contacts ◽

Laser Annealing ◽

Metal Silicide ◽

Rf Power ◽

Excimer Laser Annealing ◽

Metal Gates ◽

Sputter Deposited ◽

Gate Resistance

ABSTRACTLaser annealed refractory metal gates and Ohmic contacts have been developed for GaAs FETs and HEMTs fabricated on MBE layers grown on laser desorbed substrates. Amorphous refractory metal silicide films were sputter deposited by a method in which the RF power to separate refractory metal and silicon targets were set at predetermined deposition ratesand the substrates were rotated with respect to the sputter targets receiving a 0.2 to 0.5 nm film on each pass. The gate resistance was reduced and Ohmic contacts formed by pulsed excimer laser annealing.

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