In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

2013 ◽  
Vol 102 (5) ◽  
pp. 053502 ◽  
Author(s):  
Jun Sun ◽  
Qi Liu ◽  
Hongwei Xie ◽  
Xing Wu ◽  
Feng Xu ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Electrode Material ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Observation ◽  
Access Memory

scholarly journals Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Masashi Arita ◽  
Akihito Takahashi ◽  
Yuuki Ohno ◽  
Akitoshi Nakane ◽  
Atsushi Tsurumaki-Fukuchi ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Switching Operation

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

2015 ◽  
Vol 36 (8) ◽  
pp. 772-774 ◽  
Author(s):  
Wei Zhang ◽  
Ying Hu ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Electronic Synapse

Scanning transmission X-ray microscopy probe forin situmechanism study of graphene-oxide-based resistive random access memory

2013 ◽  
Vol 21 (1) ◽  
pp. 170-176 ◽  
Author(s):  
Hyun Woo Nho ◽  
Jong Yun Kim ◽  
Jian Wang ◽  
Hyun-Joon Shin ◽  
Sung-Yool Choi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Scanning Transmission

Here, anin situprobe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To performin situSTXM studies at the CK- and OK-edges, both the RRAM junctions and theI0junction were fabricated on a single Si3N4membrane to obtain local XANES spectra at these absorption edges with more delicateI0normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the OK-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed fromex situtransmission electron microscope studies.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature
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