Electroforming-Free and Highly Uniform Al 2 O 3 Resistive Random Access Memory by ALD-Based In Situ Hydrogen Plasma Treatment

2014 ◽  
Vol 31 (5) ◽  
pp. 057305 ◽  
Author(s):  
Hua-Yu Wu ◽  
Jian Zhang ◽  
Qi-Long Zhang ◽  
Hui Yang ◽  
Ji-Kui Luo
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Highly Uniform

scholarly journals Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Masashi Arita ◽  
Akihito Takahashi ◽  
Yuuki Ohno ◽  
Akitoshi Nakane ◽  
Atsushi Tsurumaki-Fukuchi ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Switching Operation

Scanning transmission X-ray microscopy probe forin situmechanism study of graphene-oxide-based resistive random access memory

2013 ◽  
Vol 21 (1) ◽  
pp. 170-176 ◽  
Author(s):  
Hyun Woo Nho ◽  
Jong Yun Kim ◽  
Jian Wang ◽  
Hyun-Joon Shin ◽  
Sung-Yool Choi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Scanning Transmission

Here, anin situprobe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To performin situSTXM studies at the CK- and OK-edges, both the RRAM junctions and theI0junction were fabricated on a single Si3N4membrane to obtain local XANES spectra at these absorption edges with more delicateI0normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the OK-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed fromex situtransmission electron microscope studies.

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