scholarly journals Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

2013 ◽  
Vol 102 (24) ◽  
pp. 241601 ◽  
Author(s):  
A. Tadich ◽  
M. T. Edmonds ◽  
L. Ley ◽  
F. Fromm ◽  
Y. Smets ◽  
...  
2020 ◽  
Author(s):  
Chuanding Dong ◽  
Stefan Schumacher

<p>The mechanistic study of molecular doping of organic semiconductors (OSC) requires</p><p>an improved understanding of the role and formation of integer charge transfer complexes</p><p>(ICTC) on a microscopic level. In the present work we go one crucial step beyond</p><p>the simplest scenario of an isolated bi-molecular ICTC and study ICTCs formed of</p><p>up to two (poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b,3,4-b”]dithiophene)-alt-4,7-(2,1,3-</p><p>benzothiadiazole)](PCPDT-BT) oligomers and up to two CN6-CP molecules. We find that depending</p><p>on geometric arrangement, complexes containing two conjugated oligomers and two</p><p>dopant molecules can show p-type doping with double integer charge transfer, resulting in either</p><p>two singly doped oligomers or one doubly doped oligomer. Interestingly, compared to an individual</p><p>oligomer-dopant complex, the resulting in-gap states on the doped oligomers are significantly</p><p>lowered in energy. Indicating that, already in the relatively small systems studied here, Coulomb</p><p>binding of the doping-induced positive charge to the counter-ion is reduced which is an elemental</p><p>step towards generating mobile charge carriers through molecular doping.</p>


2020 ◽  
Author(s):  
Chuanding Dong ◽  
Stefan Schumacher

<p>The mechanistic study of molecular doping of organic semiconductors (OSC) requires</p><p>an improved understanding of the role and formation of integer charge transfer complexes</p><p>(ICTC) on a microscopic level. In the present work we go one crucial step beyond</p><p>the simplest scenario of an isolated bi-molecular ICTC and study ICTCs formed of</p><p>up to two (poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b,3,4-b”]dithiophene)-alt-4,7-(2,1,3-</p><p>benzothiadiazole)](PCPDT-BT) oligomers and up to two CN6-CP molecules. We find that depending</p><p>on geometric arrangement, complexes containing two conjugated oligomers and two</p><p>dopant molecules can show p-type doping with double integer charge transfer, resulting in either</p><p>two singly doped oligomers or one doubly doped oligomer. Interestingly, compared to an individual</p><p>oligomer-dopant complex, the resulting in-gap states on the doped oligomers are significantly</p><p>lowered in energy. Indicating that, already in the relatively small systems studied here, Coulomb</p><p>binding of the doping-induced positive charge to the counter-ion is reduced which is an elemental</p><p>step towards generating mobile charge carriers through molecular doping.</p>


2011 ◽  
Vol 99 (1) ◽  
pp. 013103 ◽  
Author(s):  
Conor P. Puls ◽  
Neal E. Staley ◽  
Jeong-Sun Moon ◽  
Joshua A. Robinson ◽  
Paul M. Campbell ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2006
Author(s):  
Sebastiano Caccamo ◽  
Rosaria Anna Puglisi

Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar or structured. So far, molecular doping has been used with precursors of organic molecules, which also release the carbon in the semiconductor. The carbon atoms, acting as traps for charge carriers, deteriorate the doping efficiency. For rapid and extensive industrial exploitation, the need for a method that removes carbon has therefore been raised. In this paper, we use phosphoric acid as a precursor of the dopant. It does not contain carbon and has a smaller steric footprint than the molecules used in the literature, thus allowing a much higher predetermined surface density. We demonstrate doses of electrical carriers as high as 3 × 1015 #/cm2, with peaks of 1 × 1020 #/cm3, and high repeatability of the process, indicating an outstanding yield compared to traditional MD methods.


2021 ◽  
Vol 03 (01) ◽  
pp. 001-016
Author(s):  
Miao Xiong ◽  
Jie-Yu Wang ◽  
Jian Pei

Doping is a vital method to increase the charge carrier concentration of conjugated polymers, thus improving the performance of organic electronic devices. However, the introduction of dopants may cause phase separation. The miscibility of dopants and polymers as well as the doping-induced microstructure change are always the barriers in the way to further enhance the thermoelectrical performance. Here, recent research studies about the influence of molecular doping on the microstructures of conjugated polymers are summarized, with an emphasis on the n-type doping. Highlighted topics include how to control the distribution and density of dopants within the conjugated polymers by modulating the polymer structure, dopant structure, and solution-processing method. The strong Coulombic interactions between dopants and polymers as well as the heterogeneous doping process of polymers can hinder the polymer film to achieve better miscibility of dopants/polymer and further loading of the charge carriers. Recent developments and breakthroughs provide guidance to control the film microstructures in the doping process and achieve high-performance thermoelectrical materials.


Author(s):  
Ahmed E. Mansour ◽  
Ana Valencia ◽  
Dominique Lungwitz ◽  
Berthold Wegner ◽  
Naoki Tanaka ◽  
...  

Molecular doping is a key process to increase the density of charge carriers in organic semiconductors. Doping-induced charges in polymer semiconductors result in the formation of polarons and/or bipolarons due...


2010 ◽  
Vol 81 (23) ◽  
Author(s):  
C. Coletti ◽  
C. Riedl ◽  
D. S. Lee ◽  
B. Krauss ◽  
L. Patthey ◽  
...  

Author(s):  
Klaus-Ruediger Peters

Environmental SEM operate at specimen chamber pressures of ∼20 torr (2.7 kPa) allowing stabilization of liquid water at room temperature, working on rugged insulators, and generation of an environmental secondary electron (ESE) signal. All signals available in conventional high vacuum instruments are also utilized in the environmental SEM, including BSE, SE, absorbed current, CL, and X-ray. In addition, the ESEM allows utilization of the flux of charge carriers as information, providing exciting new signal modes not available to BSE imaging or to conventional high vacuum SEM.In the ESEM, at low vacuum, SE electrons are collected with a “gaseous detector”. This detector collects low energy electrons (and ions) with biased wires or plates similar to those used in early high vacuum SEM for SE detection. The detector electrode can be integrated into the first PLA or positioned at any other place resulting in a versatile system that provides a variety of surface information.


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