Impact of proton irradiation on deep level states in n-GaN

2013 ◽  
Vol 103 (4) ◽  
pp. 042102 ◽  
Author(s):  
Z. Zhang ◽  
A. R. Arehart ◽  
E. Cinkilic ◽  
J. Chen ◽  
E. X. Zhang ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Deep Level

scholarly journals The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1141
Author(s):  
Xiaohong Zhao ◽  
Hongliang Lu ◽  
Manli Zhao ◽  
Yuming Zhang ◽  
Yimen Zhang
Keyword(s):  
Computer Aided Design ◽  
Proton Irradiation ◽  
Deep Level ◽  
Forward Bias ◽  
Damage Mechanism ◽  
Monte Carlo Code ◽  
Electron Capture Cross Section ◽  
Current Increase ◽  
Current Characteristics ◽  
Recombination Current

The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code) simulation for non-irradiated and 3 MeV proton-irradiated samples at a fluence of 5 × 1012 p/cm2. Compared with non-irradiated samples, a new electron trap at EC-0.37 eV was measured by DLTS in post-irradiated samples and was found to be closer to the center of the forbidden band. The trap concentration in bulk, the interface trap charge density and the electron capture cross-section were 4 × 1015 cm−3, 1.8 × 1012 cm−2, and 9.61 × 10−15 cm2, respectively. The deep level trap, acting as a recombination center, resulted in a large recombination current at a lower forward bias and made the forward current increase in InP/InGaAs heterostructures for post-irradiated samples. When the deep level trap parameters were added into the technology computer-aided design (TCAD) simulation tool, the simulation results matched the current–voltage measurements data well, which verifies the validity of the damage mechanism of proton irradiation.

scholarly journals Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2MeV proton irradiation

2011 ◽  
Vol 406 (15-16) ◽  
pp. 3056-3059 ◽  
Author(s):  
C. Nyamhere ◽  
A.G.M. Das ◽  
F.D. Auret ◽  
A. Chawanda ◽  
C.A. Pineda-Vargas ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Transient Spectroscopy

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

2011 ◽  
Vol 679-680 ◽  
pp. 547-550
Author(s):  
Rupert C. Stevens ◽  
Konstantin Vassilevski ◽  
John E. Lees ◽  
Nicolas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Schottky Diode ◽  
Nuclear Power ◽  
Proton Irradiation ◽  
Deep Level ◽  
High Dose ◽  
X Ray ◽  
Power Stations ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (1013 cm-2, 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.

Evaluation Of Proton-Induced Deep Levels In n-Si

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Kono ◽  
N. Kishimoto ◽  
H. Amekura ◽  
T. Saito
Keyword(s):  
Proton Irradiation ◽  
Deep Level ◽  
Deep Levels ◽  
Beam Line ◽  
Irradiation Temperature ◽  
Deep Centers ◽  
The Past ◽  
Past Data ◽  
Transient Spectroscopy

AbstractDeep level transient spectroscopy (DLTS) has been conducted to reveal electronic states of deep centers in n-Si, under 17 MeV-proton irradiation. The DLTS device was installed into the beam line of the cyclotron. The in-situ experiment was concentrated on, to study the dynamical defect evolution and the effect of irradiation temperature on the deep centers. DLTS signals of four deep levels E0-E3 were observed when n-Si was irradiated at 300 K. Three of the four peaks were identified as V-O, V-V2− and P-V centers, in comparison with the past data of electron irradiation. The other unknown level (EO) was located at 0.16 eV below the conduction band, and 0.02 eV lower than the V-O level. The E0 peak showed a characteristic behavior dependent on the irradiation temperature. The EQ did not emerge when irradiated at 200 K, but appeared after being annealed at 300 K following the 200 K irradiation. The evolution of these levels was consecutively investigated with accumulating the proton fluence and with annealing after the irradiation.

Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

2003 ◽  
Vol 764 ◽  
Author(s):  
M. Ahoujja ◽  
H. C. Crocket ◽  
M. B. Scott ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Complete Recovery ◽  
High Energy ◽  
Curve Fit ◽  
Higher Temperature ◽  
Transient Spectroscopy ◽  
Anneal Temperature

AbstractWe report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5×1014 cm-2, the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900°C for 20 min. However, after annealing at or above 1100°C, the peak intensity gradually decreases with anneal temperature up to 1500°C, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500°C, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.

scholarly journals M-Center in Neutron Irradiated 4H-SiC

2021 ◽  
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Fast Neutron Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

1998 ◽  
Vol 537 ◽  
Author(s):  
S. A. Goodman ◽  
F. D. Auret ◽  
F. K. Koschnick ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Emission Rate ◽  
Ion Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Electron Traps ◽  
Transient Spectroscopy

AbstractWe report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardment three electron traps ER3 (Ec - 0.196 eV), ER4 (Ec - 0.78 eV), and ER5 (Ec - 0.95 eV) were introduced uniformly in the region profiled by DLTS with introduction rates of 3270 ± 200, 1510 ± 300, and 3030 ± 500 cm-1 respectively. Capture cross section measurements revealed that the electron capture kinetics of ER5 is similar to that of a line defect. A defect with similar electronic properties as ER3 is observed after 2.0 MeV proton irradiation. The emission rate of ER3 depends on the electric field strength in the space-charge region. This emission rate is modelled according to the Poole-Frenkel distortion of a square well with a radius of 20 ± 2 Å or alternatively, a Gaussian well with a characteristic width of 6.0 ± 1 Å. Hence, we conclude that ER1 is a point defect which appears to have an acceptor like character. Two additional electron traps, ER1 (Ec -0.13 eV) and ER2 (Ec - 0.16eV) with introduction rates of 30 ± 10 and 600 ± 100 cm-1 not thusfar observed after electron or He-ion bombardment were observed after proton irradiation.

Proton Irradiation Damage in Zn and Cd Doped InP

1993 ◽  
Vol 325 ◽  
Author(s):  
George C. Rybicki ◽  
Wendell S. Williams
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Damage ◽  
Radiation Induced ◽  
Diffusion Rates ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Capture Cross Sections

AbstractDeep Level Transient Spectroscopy (DLTS) was used to study the defects introduced in Zn and Cd doped Schottky barrier diodes by 2 MeV proton irradiation. The defects H3, H4 and H5 were observed in lightly Zn doped InP, while only the defects H3 and H5 were observed in more heavily Zn doped and Cd doped InP. The defect activation energies and capture cross sections did not vary between the Zn and Cd doped InP.The concentration of the radiation induced defects was also measured. The introduction rate of the defect H4 in the lightly Zn doped InP and the introduction rate of the defect H3 in the heavily Zn and Cd doped InP were about equal, but the introduction rate of the defect H5 varied strongly among the three types of material. The introduction rate of H5 was highest in the heavily Zn doped InP but the lowest in the heavily Cd doped InP, even though they were doped comparably. As a result, the total defect introduction rate was lowest in the highly Cd doped InP.The results can be interpreted in terms of the models for the formation and annealing of defects, and by the different diffusion rates of Zn and Cd in InP.

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