Ultraviolet Raman spectra of single uncoated and SiO2-coated silicon-on-insulator nanowires: Phonon boundary scattering, wave-vector relaxation and stress

It has been shown by Maradudin and Flinn1 (1963) that, in weak anharmonic crystals, the lowest order anharmonic contributions to the Debye-Waller factor are of 0(λ2), where λ is the Van Hove2 (1961) ordering parameter. There are four such terms, two of them are of [Formula: see text] (where [Formula: see text] is the scattering wave-vector) and are known as the normal terms. Other two terms are of [Formula: see text] and are known as the anomalous terms. These four terms are of significant complexity. In this present work, a computation of these four terms will be reported for sodium metal and the results will be compared with experimentally determined values.

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From the Casimir Limit to Phononic Crystals: 20 Years of Phonon Transport Studies Using Silicon-on-Insulator Technology

Journal of Heat Transfer ◽

10.1115/1.4023577 ◽

2013 ◽

Vol 135 (6) ◽

Cited By ~ 72

Author(s):

Amy M. Marconnet ◽

Mehdi Asheghi ◽

Kenneth E. Goodson

Keyword(s):

Room Temperature ◽

Crystalline Silicon ◽

Phonon Dispersion ◽

Single Crystal Silicon ◽

Phonon Transport ◽

Silicon On Insulator ◽

Boundary Scattering ◽

Porous Films ◽

Crystal Silicon ◽

20 Nm

Silicon-on-insulator (SOI) technology has sparked advances in semiconductor and MEMs manufacturing and revolutionized our ability to study phonon transport phenomena by providing single-crystal silicon layers with thickness down to a few tens of nanometers. These nearly perfect crystalline silicon layers are an ideal platform for studying ballistic phonon transport and the coupling of boundary scattering with other mechanisms, including impurities and periodic pores. Early studies showed clear evidence of the size effect on thermal conduction due to phonon boundary scattering in films down to 20 nm thick and provided the first compelling room temperature evidence for the Casimir limit at room temperature. More recent studies on ultrathin films and periodically porous thin films are exploring the possibility of phonon dispersion modifications in confined geometries and porous films.

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Ultraviolet Raman spectra of few nanometer thick silicon-on-insulator nanofilms: Lifetime reduction of confined phonons

Applied Physics Letters ◽

10.1063/1.4898672 ◽

2014 ◽

Vol 105 (15) ◽

pp. 153112 ◽

Cited By ~ 8

Author(s):

Vladimir Poborchii ◽

Yukinori Morita ◽

Manabu Ishimaru ◽

Tetsuya Tada

Keyword(s):

Raman Spectra ◽

Silicon On Insulator ◽

Confined Phonons

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Scattering wave vector dependence of Raman intensity of the v1 internal mode in KH2PO4

Solid State Communications ◽

10.1016/0038-1098(85)90168-1 ◽

1985 ◽

Vol 54 (11) ◽

pp. 979-980 ◽

Cited By ~ 13

Author(s):

Y. Tominaga ◽

M. Tokunaga ◽

I. Tatsuzaki

Keyword(s):

Wave Vector ◽

Raman Intensity ◽

Internal Mode ◽

Scattering Wave

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Size effects in near-ultraviolet Raman spectra of few-nanometer-thick silicon-on-insulator nanofilms

Journal of Applied Physics ◽

10.1063/1.4947021 ◽

2016 ◽

Vol 119 (15) ◽

pp. 154302 ◽

Cited By ~ 2

Author(s):

Vladimir Poborchii ◽

Yukinori Morita ◽

Tetsuya Tada ◽

Pavel I. Geshev ◽

Zhandos N. Utegulov ◽

...

Keyword(s):

Raman Spectra ◽

Size Effects ◽

Silicon On Insulator ◽

Near Ultraviolet

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Запрещенное резонансное комбинационное рассеяние света в сверхрешетках GaAs/AlAs: эксперимент и расчеты

Физика и техника полупроводников ◽

10.21883/ftp.2018.06.45917.8671 ◽

2018 ◽

Vol 52 (6) ◽

pp. 569

Author(s):

В.А. Володин ◽

В.А. Сачков ◽

М.П. Синюков

Keyword(s):

Dipole Moment ◽

Raman Scattering ◽

Raman Spectra ◽

Wave Vector ◽

Phonon Scattering ◽

Optical Microscope ◽

Deformation Potential ◽

Potential Mechanism ◽

Model Approximation ◽

Born Model

AbstractThe Raman spectra of GaAs/AlAs(100) superlattices are calculated and studied experimentally for various wave-vector directions. The experiments are performed when applying a confocal optical microscope combined with a micro-Raman spectrometer for various scattering geometries both for phonons with a wave vector directed along the normal to a superlattice and in the in-plane geometry. The frequencies and eigenvectors of phonons are calculated in the extended Born model approximation taking into account Coulomb interaction in the rigid-ion approximation. The Raman spectra are calculated in the scope of the deformation- potential mechanism; herewith, it turns out that additional peaks, which are not described in the scope of this approach, appear in the experimental spectra. It seems likely that these peaks appear due to the manifestation of Raman scattering forbidden by selection rules under resonance conditions. An attempt is made to explain the appearance of these peaks in the experimental spectra within the scope of inelastic phonon scattering at bound charges (phonons with a large dipole moment).

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Impact of Thermal Sub-Continuum Effects on Electrical Performance of Silicon-on-Insulator Transistors

Advances in Electronic Packaging, Parts A, B, and C ◽

10.1115/ipack2005-73182 ◽

2005 ◽

Cited By ~ 4

Author(s):

Keivan Etessam-Yazdani ◽

Rozana Hussin ◽

Mehdi Asheghi

Keyword(s):

Thermal Resistance ◽

Drain Current ◽

Silicon On Insulator ◽

Electrical Performance ◽

Gate Length ◽

Boundary Scattering ◽

Self Heating ◽

Soi Devices ◽

The Impact ◽

Channel Region

In this manuscript, the impact of scaling on self-heating of silicon-on-insulator (SOI) transistors is investigated. Effect of temperature dependent phonon-boundary scattering in silicon thin films, which results in reduction in thermal conduction in the channel region, is incorporated into a electro-thermal simulation tool. Results of DC electro-thermal simulations are used to study drain current degradation due to self-heating and to obtain the thermal resistance of SOI devices as a function of gate length and silicon layer thickness. The device thermal resistance is increased by nearly a factor of 3 due to the scaling of gate length from 180nm to 10nm. Self-heating in SOI devices with gate length of 10nm can be responsible for up to 30% reduction in the saturation current and neglecting phonon-boundary scattering in the channel region may underestimate the degradation of drain current due to self-heating by nearly a factor of two.

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