A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

2013 ◽  
Vol 84 (12) ◽  
pp. 125101 ◽  
Author(s):  
Hongkai Li ◽  
Zilian Qu ◽  
Qian Zhao ◽  
Fangxin Tian ◽  
Dewen Zhao ◽  
...  
2014 ◽  
Vol 1006-1007 ◽  
pp. 627-630 ◽  
Author(s):  
Xu Dong Yang

CAN bus was used as the data transferring channels in the two–level controllers, and the real-time,dexterity,expansibility and security for the Gluing control system based on CAN bus can be improved obviously.The system structure, principle and software design were introduced.The experiment shows that it is a reliable control system and it can meet the requirements of automatic gluing tasks.


2021 ◽  
Vol 8 (1) ◽  
Author(s):  
M. Howell ◽  
S.-H. Kim ◽  
M. Martinez ◽  
K. White

AbstractThe helium cryogenic system at Spallation Neutron Source (SNS) provides cooling to 81 superconducting radio frequency cavities. To support the operation of the cryogenic facility, a highly reliable control system consisting of software, hardware, and Human Machine Interface (HMI) has been developed and improved during the first fifteen years of operation. Integrating the cryogenic control system with other subsystems of the SNS complex is an important aspect to the success of the operation. The operating experience, lessons learned and recommendations to consider for future facilities will be detailed in this paper.


1999 ◽  
Vol 32 (2) ◽  
pp. 8261-8266
Author(s):  
J. Amat ◽  
R. Villà ◽  
J. Aranda

2000 ◽  
Vol 613 ◽  
Author(s):  
Joseph Lu ◽  
Jonathan Coppeta ◽  
Chris Rogers ◽  
Vincent P. Manno ◽  
Livia Racz ◽  
...  

ABSTRACTThe fluid film thickness and drag during chemical-mechanical polishing are largely dependent on the shape of the wafer polished. In this study we use dual emission laser induced fluorescence to measure the film thickness and a strain gage, mounted on the polishing table, to measure the friction force between the wafer and the pad. All measurements are taken during real polishing processes. The trends indicate that with a convex wafer in contact with the polishing pad, the slurry layer increases with increasing platen speed and decreases with increasing downforce. The drag force decreases with increasing platen speed and increases with increasing downforce. These similarities are observed for both in-situ and ex-situ conditioning. However, these trends are significantly different for the case of a concave wafer in contact with the polishing pad. During ex-situ conditioning the trends are similar as with a convex wafer. However, in-situ conditioning decreases the slurry film layer with increasing platen speed, and increases it with increasing downforce in the case of the concave wafer. The drag force increases with increasing platen speed as well as increasing downforce. Since we are continually polishing, the wafer shape does change over the course of each experiment causing a larger error in repeatability than the measurement error itself. Different wafers are used throughout the experiment and the results are consistent with the variance of the wafer shape. Local pressure measurements on the rotating wafer help explain the variances in fluid film thickness and friction during polishing.


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