Current–voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).

Download Full-text

Fabrication and investigation of asymmetric current‐voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure

Applied Physics Letters ◽

10.1063/1.103043 ◽

1990 ◽

Vol 56 (19) ◽

pp. 1916-1918 ◽

Cited By ~ 96

Author(s):

N. J. Geddes ◽

J. R. Sambles ◽

D. J. Jarvis ◽

W. G. Parker ◽

D. J. Sandman

Keyword(s):

Metal Structure ◽

Langmuir Blodgett ◽

Current Voltage ◽

Current Voltage Characteristics

Download Full-text

Development of Porous Silicon Based Visible Light Photodetectors

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.538.341 ◽

2013 ◽

Vol 538 ◽

pp. 341-344 ◽

Cited By ~ 1

Author(s):

Yuan Ming Huang ◽

Qing Lan Ma ◽

Bao Gai Zhai

Keyword(s):

Porous Silicon ◽

Visible Light ◽

Silicon Film ◽

Metal Semiconductor Metal ◽

Current Voltage ◽

Voltage Dependent ◽

Current Voltage Characteristics ◽

Silicon Based ◽

Scanning Electron ◽

Tungsten Lamp

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

Download Full-text

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

Chinese Optics Letters ◽

10.3788/col20080608.0615 ◽

2008 ◽

Vol 6 (8) ◽

pp. 615-618 ◽

Cited By ~ 2

Author(s):

张军琴 Junqin Zhang ◽

杨银堂 Yintang Yang ◽

娄利飞 Lifei Lou ◽

刘莉 Yan Zhao

Keyword(s):

Metal Semiconductor Metal ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Ultraviolet Photodetectors

Download Full-text

New Bias-Controlled Three-Color Detectors using Stacked a-SiC:H/a-Si:H Heterostructures

MRS Proceedings ◽

10.1557/proc-377-779 ◽

1995 ◽

Vol 377 ◽

Cited By ~ 8

Author(s):

Marko Topič ◽

Franc Smole ◽

Aleš Groznik ◽

Jože Furlan

Keyword(s):

Metal Structure ◽

Simple System ◽

Spectral Responsivity ◽

Rejection Ratio ◽

Photocurrent Generation ◽

Current Voltage ◽

Rate Relationship ◽

Current Voltage Characteristics ◽

Geometrical Dimensions ◽

High Rejection

ABSTRACTA novel family of three-terminal three-color (blue, green, red) detectors based on stacked a-SiC:H/a-Si:H heterostructures is presented: TCO/PIN/TCO/PINIP/TCO/metal and TCO/PINIP/TCO/PIN/TCO/metal structure. The analysis of stacked photodetectors and the optimization of their geometrical dimensions is performed using the adopted ASPIN simulation program. Both structures are mutually compared with regard to calculated current-voltage characteristics and spectral responsivity. They both exhibit linear photocurrent/generation-rate relationship for all three colors at peak wavelengths 430, 530, 630 nm, applying ±1 V or more. This linearity allows that all three colors can be detected with high rejection ratio using simple system electronics.

Download Full-text