Strain-Sensitive Current-Voltage Characteristics of ZnSe Nanowire in Metal-Semiconductor-Metal Nanostructure

2013 ◽  
Vol 30 (11) ◽  
pp. 117901 ◽  
Author(s):  
Yu Tan ◽  
Yan-Guo Wang
Keyword(s):  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Metal Nanostructure ◽  
Current Voltage Characteristics

Development of Porous Silicon Based Visible Light Photodetectors

2013 ◽  
Vol 538 ◽  
pp. 341-344 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Silicon Film ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Scanning Electron ◽  
Tungsten Lamp

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

2008 ◽  
Vol 6 (8) ◽  
pp. 615-618 ◽  
Author(s):  
张军琴 Junqin Zhang ◽  
杨银堂 Yintang Yang ◽  
娄利飞 Lifei Lou ◽  
刘莉 Yan Zhao
Keyword(s):  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ultraviolet Photodetectors
Sign in / Sign up

Export Citation Format

Share Document