Thermal Stability and Electrical Characteristics of Tungsten Nitride Gates in Metal–Oxide–Semiconductor Devices

2008 ◽  
Vol 47 (2) ◽  
pp. 872-878 ◽  
Author(s):  
Chih-Feng Huang ◽  
Bing-Yue Tsui ◽  
Chih-Hsun Lu
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tungsten Nitride ◽  
Electrical Characteristics

Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

2007 ◽  
Vol 90 (13) ◽  
pp. 132101 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Cheng Wang ◽  
Tien-Ko Wang ◽  
Chuen-Horng Tsai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Nitrogen Content ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of

Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

2018 ◽  
Vol 123 (3) ◽  
pp. 035101 ◽  
Author(s):  
Oren Zonensain ◽  
Sivan Fadida ◽  
Ilanit Fisher ◽  
Juwen Gao ◽  
Michal Danek ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Thermal Stability Of
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