Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

2014 ◽  
Vol 116 (16) ◽  
pp. 163109 ◽  
Author(s):  
Jaehwan Kim ◽  
Daehong Min ◽  
Jongjin Jang ◽  
Kyuseung Lee ◽  
Sooryong Chae ◽  
...  
2010 ◽  
Vol 405 (22) ◽  
pp. 4668-4672 ◽  
Author(s):  
H. Wang ◽  
D.S. Jiang ◽  
U. Jahn ◽  
J.J. Zhu ◽  
D.G. Zhao ◽  
...  

1979 ◽  
Vol 44 ◽  
pp. 307-313
Author(s):  
D.S. Spicer

A possible relationship between the hot prominence transition sheath, increased internal turbulent and/or helical motion prior to prominence eruption and the prominence eruption (“disparition brusque”) is discussed. The associated darkening of the filament or brightening of the prominence is interpreted as a change in the prominence’s internal pressure gradient which, if of the correct sign, can lead to short wavelength turbulent convection within the prominence. Associated with such a pressure gradient change may be the alteration of the current density gradient within the prominence. Such a change in the current density gradient may also be due to the relative motion of the neighbouring plages thereby increasing the magnetic shear within the prominence, i.e., steepening the current density gradient. Depending on the magnitude of the current density gradient, i.e., magnetic shear, disruption of the prominence can occur by either a long wavelength ideal MHD helical (“kink”) convective instability and/or a long wavelength resistive helical (“kink”) convective instability (tearing mode). The long wavelength ideal MHD helical instability will lead to helical rotation and thus unwinding due to diamagnetic effects and plasma ejections due to convection. The long wavelength resistive helical instability will lead to both unwinding and plasma ejections, but also to accelerated plasma flow, long wavelength magnetic field filamentation, accelerated particles and long wavelength heating internal to the prominence.


Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.


1991 ◽  
Vol 161 (11) ◽  
pp. 95 ◽  
Author(s):  
A.I. Frank
Keyword(s):  

GIS Business ◽  
2020 ◽  
Vol 15 (1) ◽  
pp. 383-394
Author(s):  
K. Shalini ◽  
K.Rajasekhar

In this paper, the effect of Slip and Hall effects on the flow of Hyperbolic tangent fluid through a porous medium in a planar channel with peristalsis under the assumption of long wavelength is investigated. A Closed form solutions are obtained for axial velocity and pressure gradient by employing perturbation technique. The effects of various emerging parameters on the pressure gradient, time averaged volume flow rate and frictional force are discussed with the aid of graphs.


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