scholarly journals Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation

2018 ◽  
Vol 2 (12) ◽  
pp. 125010 ◽  
Author(s):  
Joydeep Ghosh
Keyword(s):  
Charge Density ◽  
Strain Relaxation ◽  
Ingan Layer ◽  
Double Heterostructures

Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
S. J. Pearton ◽  
S. Bendi ◽  
K. S. Jones ◽  
V. Krishnamoorthy ◽  
R. G. Wilson ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Defect Density ◽  
Ingan Layer ◽  
Double Heterostructure ◽  
Double Heterostructures ◽  
Sequential Processes ◽  
Thermal Stability Of

ABSTRACTThe apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150°C higher than N2. The dissociation of Mg-H complexes and the loss of hydrogen from GaN are sequential processes, with reactivation occurring at ≤700°C for annealing under N2, while significant concentrations of hydrogen remain in the crystal even at 900°C in implanted samples. The hydrogen is gettered to regions of highest defect density such as the InGaN layer in a GaN/InGaN double heterostructure. The addition of an accelerating potential for 2H+ ions in the plasma did not greatly affect the deuterium profiles.

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

2014 ◽  
Vol 116 (16) ◽  
pp. 163109 ◽  
Author(s):  
Jaehwan Kim ◽  
Daehong Min ◽  
Jongjin Jang ◽  
Kyuseung Lee ◽  
Sooryong Chae ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Ingan Layer ◽  
Long Wavelength

Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer

2017 ◽  
Vol 121 (33) ◽  
pp. 18095-18101 ◽  
Author(s):  
Jianxun Liu ◽  
Hongwei Liang ◽  
Xiantong Zheng ◽  
Yang Liu ◽  
Xiaochuan Xia ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Crystalline Quality ◽  
Ingan Layer ◽  
Double Heterostructures

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

2010 ◽  
Vol 405 (22) ◽  
pp. 4668-4672 ◽  
Author(s):  
H. Wang ◽  
D.S. Jiang ◽  
U. Jahn ◽  
J.J. Zhu ◽  
D.G. Zhao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Strain Relaxation ◽  
Ingan Layer ◽  
Structural And Optical Properties

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Incommensurate modulated phases of the NbxTa1-xTe4 charge density wave system

1992 ◽  
Vol 50 (1) ◽  
pp. 58-59
Author(s):  
S. Ritchie ◽  
J. C. Bennett ◽  
A. Prodan ◽  
F.W. Boswell ◽  
J.M. Corbett
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Direct Evidence ◽  
Density Wave ◽  
Wave System ◽  
Modulated Phases ◽  
Metal Atoms ◽  
Incommensurate Modulation ◽  
End Members ◽  
Modulation Wave Vector

A continuous sequence of compounds having composition NbxTa1-xTe4; 0 ≤ x ≤ 1 have been studied by electron diffraction and microscopy. Previous studies have shown that the end members of the series, TaTε4 and NbTε4 possess a quasi-one-dimensional character and exhibit charge density wave (CDW) distortions. In these compounds, the subcell structure is tetragonal with axes (a × a × c) and consists of the metal atoms (Nb or Ta) centered within an extended antiprismatic cage of Te atoms. At room temperature, TaTε4 has a commensurate modulation structure with a 2a × 2a × 3c unit cell. In NbTε4, an incommensurate modulation with × ∼ 16c axes is observed. Preliminary studies of the mixed compounds NbxTα1-xTε4 showed a discontinuous jump of the modulation wave vector commensurate to incommensurate when the Nb dopant concentration x, exceeded x ≃ 0.3, In this paper, the nature of the compositional dependence of is studied in greater detail and evidence is presented for a stepwise variation of . This constitutes the first direct evidence for a Devil's staircase in CDW materials.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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