scholarly journals Low-threshold stimulated emission from lysozyme amyloid fibrils doped with a blue laser dye

2015 ◽  
Vol 106 (2) ◽  
pp. 023702 ◽  
Author(s):  
L. Sznitko ◽  
P. Hanczyc ◽  
J. Mysliwiec ◽  
M. Samoc
2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.


2008 ◽  
Vol 14 (4) ◽  
pp. 1053-1057 ◽  
Author(s):  
Hsing-Chao Chen ◽  
Miin-Jang Chen ◽  
Mong-Kai Wu ◽  
Yung-Chen Cheng ◽  
Feng-Yu Tsai

2014 ◽  
Vol 105 (14) ◽  
pp. 141106 ◽  
Author(s):  
Xiao-Hang Li ◽  
Theeradetch Detchprohm ◽  
Tsung-Ting Kao ◽  
Md. Mahbub Satter ◽  
Shyh-Chiang Shen ◽  
...  

2020 ◽  
Vol 8 (17) ◽  
pp. 5847-5855
Author(s):  
Litao Zhao ◽  
Yu Chen ◽  
Xiantong Yu ◽  
Xiao Xing ◽  
Jinquan Chen ◽  
...  

The surface plasmon polaritons induced single-exciton lasing of lead halide perovskite QDs in room temperature may provide a new concept for the further design of low threshold stimulated emission colloidal nanocrystal lasers.


1994 ◽  
Vol 339 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano

ABSTRACTHigh-quality AlGaN/GaN and AlGaN/GalnN DHs were fabricated by MOVPE using low-temperature deposited AlN buffer layer. We applied the newly designed dual-flow-channel reactor, by which high-quality and well-controlled AlGaN and GalnN alloys and their heterostructures have been grown. AlGaN/GaN-DH shows low-threshold stimulated emission by optical pumping at room temperature for both edge and surface modes. The peak wavelength of stimulated emission for edge mode was 369.5nm. The peak wavelength of stimulated emission was affected by the strain due to heterostructure as well as the many body effect under high excitation. The wavelength for stimulated emission can be widely changed by using GalnN as the active layer. AlGaN/GalnN DH with InN molar fraction of the active layer of 0.09 shows room temperature low-threshold stimulated emission for edge mode by optical pumping with peak wavelength of 402.5nm. A few mW-class symmetrical AlGaN/GaN DH LED and anti symmetrical AlGaN/GalnN/GaN DH LED using low energy electron beam irradiation (LEEB1) treated Mg-doped P-AlGaN cladding layer were fabricated. These results show that column-Ill nitrides are promising for the realization of practical short wavelength LED and LD.


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