scholarly journals Low-threshold stimulated emission from lysozyme amyloid fibrils doped with a blue laser dye

2015 ◽  
Vol 106 (2) ◽  
pp. 023702 ◽  
Author(s):  
L. Sznitko ◽  
P. Hanczyc ◽  
J. Mysliwiec ◽  
M. Samoc
Keyword(s):  
Amyloid Fibrils ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Laser Dye ◽  
Low Threshold

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

Low-Threshold Stimulated Emission in ZnO Thin Films Grown by Atomic Layer Deposition

2008 ◽  
Vol 14 (4) ◽  
pp. 1053-1057 ◽  
Author(s):  
Hsing-Chao Chen ◽  
Miin-Jang Chen ◽  
Mong-Kai Wu ◽  
Yung-Chen Cheng ◽  
Feng-Yu Tsai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Stimulated Emission ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Low Threshold

scholarly journals Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

2014 ◽  
Vol 105 (14) ◽  
pp. 141106 ◽  
Author(s):  
Xiao-Hang Li ◽  
Theeradetch Detchprohm ◽  
Tsung-Ting Kao ◽  
Md. Mahbub Satter ◽  
Shyh-Chiang Shen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Low Threshold

Low-threshold stimulated emission in perovskite quantum dots: single-exciton optical gain induced by surface plasmon polaritons at room temperature

2020 ◽  
Vol 8 (17) ◽  
pp. 5847-5855
Author(s):  
Litao Zhao ◽  
Yu Chen ◽  
Xiantong Yu ◽  
Xiao Xing ◽  
Jinquan Chen ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Room Temperature ◽  
Optical Gain ◽  
Stimulated Emission ◽  
Perovskite Quantum Dots ◽  
Low Threshold ◽  
Halide Perovskite ◽  
Plasmon Polaritons ◽  
Lead Halide

The surface plasmon polaritons induced single-exciton lasing of lead halide perovskite QDs in room temperature may provide a new concept for the further design of low threshold stimulated emission colloidal nanocrystal lasers.

Movpe Growth of High Quality AlxGa1−xN/GayIn1-yN (x>0, y<1) Heterostructures for Short Wavelength Light Emitter

1994 ◽  
Vol 339 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Active Layer ◽  
Short Wavelength ◽  
Room Temperature ◽  
Optical Pumping ◽  
Molar Fraction ◽  
Stimulated Emission ◽  
Edge Mode ◽  
Peak Wavelength ◽  
High Quality ◽  
Low Threshold

ABSTRACTHigh-quality AlGaN/GaN and AlGaN/GalnN DHs were fabricated by MOVPE using low-temperature deposited AlN buffer layer. We applied the newly designed dual-flow-channel reactor, by which high-quality and well-controlled AlGaN and GalnN alloys and their heterostructures have been grown. AlGaN/GaN-DH shows low-threshold stimulated emission by optical pumping at room temperature for both edge and surface modes. The peak wavelength of stimulated emission for edge mode was 369.5nm. The peak wavelength of stimulated emission was affected by the strain due to heterostructure as well as the many body effect under high excitation. The wavelength for stimulated emission can be widely changed by using GalnN as the active layer. AlGaN/GalnN DH with InN molar fraction of the active layer of 0.09 shows room temperature low-threshold stimulated emission for edge mode by optical pumping with peak wavelength of 402.5nm. A few mW-class symmetrical AlGaN/GaN DH LED and anti symmetrical AlGaN/GalnN/GaN DH LED using low energy electron beam irradiation (LEEB1) treated Mg-doped P-AlGaN cladding layer were fabricated. These results show that column-Ill nitrides are promising for the realization of practical short wavelength LED and LD.

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