Significant improvement of light absorbance of molybdenum plate by surface asperity formation using oxidation-reduction treatment and application to high temperature radiation heat energy use

Neutron powder diffraction has been essential for understanding the structures of the new high temperature oxide superconductors because of the difficulty in locating oxygen with X-rays in the presence of heavy metals, especially when single crystals are usually not available. This understanding lead to the discovery of new materials. In this paper we will show how it also sheds light on the crystal chemistry of oxide superconductors—the effects of oxidation/reduction, phase separation, pressure etc.

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Energy-effective AlMgB14 production by self-propagating high-temperature synthesis (SHS) using the chemical furnace as a source of heat energy

Ceramics International ◽

10.1016/j.ceramint.2021.04.183 ◽

2021 ◽

Author(s):

P.Yu. Nikitin ◽

A.E. Matveev ◽

I.A. Zhukov

Keyword(s):

High Temperature ◽

Heat Energy ◽

Temperature Synthesis ◽

High Temperature Synthesis ◽

Chemical Furnace

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Study on Heat-Energy Exchange Media of Kalina Cycle. High-Pressure and High-Temperature Vapor-Liquid Equilibria for the Acetone+CO2 System.

KAGAKU KOGAKU RONBUNSHU ◽

10.1252/kakoronbunshu.29.137 ◽

2003 ◽

Vol 29 (1) ◽

pp. 137-139

Author(s):

Hiroshi Sato ◽

Yoshiharu Suehiro ◽

Shinpei Kuroda ◽

Kazunari Ohgaki

Keyword(s):

High Pressure ◽

High Temperature ◽

Energy Exchange ◽

Heat Energy ◽

Kalina Cycle ◽

Vapor Liquid Equilibria ◽

High Temperature Vapor ◽

Vapor Liquid

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Comparative study of phase change phenomenon in high temperature cascade latent heat energy storage system using conduction and conduction-convection models

Solar Energy ◽

10.1016/j.solener.2018.10.048 ◽

2018 ◽

Vol 176 ◽

pp. 627-637 ◽

Cited By ~ 8

Author(s):

J. Sunku Prasad ◽

P. Muthukumar ◽

R. Anandalakshmi ◽

Hakeem Niyas

Keyword(s):

High Temperature ◽

Energy Storage ◽

Comparative Study ◽

Phase Change ◽

Latent Heat ◽

Storage System ◽

Energy Storage System ◽

Heat Energy

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Catalytic Activity of Oxidation-Reduction Pre-Treated Ni3Al for Methane Steam Reforming

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.89-91.645 ◽

2010 ◽

Vol 89-91 ◽

pp. 645-650 ◽

Cited By ~ 2

Author(s):

Ya Xu ◽

Dong Hyun Chun ◽

Jun Hyuk Jang ◽

Masahiko Demura ◽

Dang Moon Wee ◽

...

Keyword(s):

Catalytic Activity ◽

Steam Reforming ◽

Active Surface ◽

Methane Steam Reforming ◽

Reduction Treatment ◽

Highly Active ◽

Methane Steam ◽

Oxidation Reduction ◽

Pre Treatment ◽

Oxidation In Air

The catalytic activity of oxidation-reduction pre-treated Ni3Al powder for methane steam reforming was examined. The oxidation-reduction pre-treatment consisted of two steps: oxidation in air at various temperatures from 973 to 1373 K, and then followed by reduction in H2 at 873 K. It was found that the oxidation-reduction treatments significantly reduced the onset temperature of activity, i.e., improved the activity of Ni3Al powder at low temperatures. The characterization of Ni3Al surface showed that an outer surface layer of fine NiO particles were formed on the surface of Ni3Al after oxidation. These NiO particles were reduced to metallic Ni by the subsequent reduction treatment, resulting in the high activity for methane steam reforming. These results indicate that the Ni3Al can form highly active surface structure with oxidation-reduction treatment, having excellent heat resistance.

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High temperature / radiation hardened capable ARM® Cortex®-M0 microcontrollers

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2016-hitec-46 ◽

2016 ◽

Vol 2016 (HiTEC) ◽

pp. 000046-000050

Author(s):

R. Bannatyne ◽

D. Gifford ◽

K. Klein ◽

C. Merritt

Keyword(s):

High Temperature ◽

Lower Cost ◽

Cmos Technology ◽

The Other ◽

Device Performance ◽

High Radiation ◽

Plastic Package ◽

Radiation Hardened ◽

Temperature Radiation ◽

On Chip

Abstract VORAGO Technologies has developed a pair of ARM Cortex M0 MCUs designed from the ground up to be high temperature capable. One of these devices is specifically developed for high temperature applications, the other adds capabilities that make it suitable for use in high radiation environments as well. These devices are fabricated using a modified version of commercial bulk 130nm CMOS technology utilizing our HARDSIL® technology, which provides immunity to the increased effects of latchup and EOS encountered at higher application temperatures. In addition to the processor these devices include features more typical of low temperature SoCs including on-chip memory, timers, and communications peripherals. In addition to the ceramic package and die format typically utilized at high temperature, a new lower-cost plastic package is available that has been characterized at higher temperatures. These devices have been characterized at temperatures up to 200C and results showing the latchup behavior and device performance are provided. Some of the tradeoffs involved in creating such devices are discussed, as well as some of the similarities and tradeoffs in creating a radiation hardened devices vs. a high temperature device.

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