Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses
2013 ◽
Vol 52
(8S)
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pp. 08JN02
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2015 ◽
Vol 764-765
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pp. 486-490
2004 ◽
Vol 43
(4B)
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pp. 2255-2258
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