Synthesis of single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

2015 ◽  
Vol 3 (31) ◽  
pp. 8074-8079 ◽  
Author(s):  
Changyong Lan ◽  
Chun Li ◽  
Yi Yin ◽  
Huayang Guo ◽  
Shuai Wang
Keyword(s):  
Visible Light ◽  
Vapor Deposition ◽  
High Performance ◽  
Incident Light ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Single Crystalline ◽  
Promising Application ◽  
Photo Detection ◽  
First Time

Single-crystalline GeS nanoribbons were synthesized by chemical vapor deposition for the first time. The nanoribbon photodetectors respond to the entire visible incident light with a response edge at around 750 nm and a high responsivity, indicating their promising application for high performance broadband visible-light photo-detection.

Manganese Oxide Nanoarchitectures as Chemoresistive Gas Sensors to Monitor Fruit Ripening

2020 ◽  
Vol 20 (5) ◽  
pp. 3025-3030 ◽  
Author(s):  
Lorenzo Bigiani ◽  
Dario Zappa ◽  
Elisabetta Comini ◽  
Chiara Maccato ◽  
Alberto Gasparotto ◽  
...  
Keyword(s):  
Quality Control ◽  
Gas Sensors ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Metal Particle ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Food Quality Control ◽  
Efficient Detection ◽  
First Time

The efficient detection of low-concentration ethylene is a challenging issue of key importance for food quality control end-uses. Herein, we report on the fabrication of MnO2-based nanoarchitectures by a two-step plasma-assisted process, consisting in the initial chemical vapor deposition of MnO2 (host) on polycrystalline Al2O3 substrates and the subsequent functionalization with Ag and Au-based nanoparticles (guest) by sputtering processes. The resulting composites, characterized by a high Ag/Au dispersion and an effective host-guest contact, were tested for the first time as chemoresistive gas sensors for ethylene recognition at low temperatures. The high sensitivity and promising responses, enhanced by metal particle introduction, candidate the target systems as attractive platforms for the eventual monitoring of vegetables/fruits ripening and ageing.

A one-step chemical vapor deposition approach for solid solution PrxNd1−xB6 nanowire growth

RSC Advances ◽  
2015 ◽  
Vol 5 (117) ◽  
pp. 96412-96415
Author(s):  
Qidong Li ◽  
Yanming Zhao ◽  
Qinghua Fan ◽  
Wei Han
Keyword(s):  
Solid Solution ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystalline Solid ◽  
Nanowire Growth ◽  
Single Crystalline ◽  
One Step ◽  
First Time

Structurally uniform and well-doped single crystalline solid solution PrxNd1−xB6 nanowires were fabricated by a one-step CVD approach for the first time.

Hydrogen evolution reaction in acidic media on single-crystalline titanium nitride nanowires as an efficient non-noble metal electrocatalyst

2016 ◽  
Vol 4 (10) ◽  
pp. 3673-3677 ◽  
Author(s):  
Yujie Han ◽  
Xin Yue ◽  
Yanshuo Jin ◽  
Xiangdong Huang ◽  
Pei Kang Shen
Keyword(s):  
Titanium Nitride ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Acidic Media ◽  
Single Crystalline ◽  
First Time

Single-crystalline titanium nitride nanowires have been directly synthesized by a novel chemical vapor deposition method and used as efficient catalysts for hydrogen evolution reaction for the first time.

scholarly journals Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition

Nanophotonics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 3035-3044 ◽  
Author(s):  
Yifan Xiao ◽  
Long Min ◽  
Xinke Liu ◽  
Wenjun Liu ◽  
Usman Younis ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Uv Light ◽  
Incident Light ◽  
Chemical Vapor ◽  
Low Noise ◽  
Light Power ◽  
Vapor Growth ◽  
First Order

AbstractThe MoS2 photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics. Here, we integrate multilayer MoS2 on monocrystalline SiC substrate though direct chemical vapor deposition. The MoS2 film on SiC substrate shows high quality and thermal stability, in which the full width at half-maximum and first-order temperature coefficient for the $E_{2g}^1$ Raman mode are 4.6 cm−1 and −0.01382 cm−1/K, respectively. The fabricated photodetector exhibits excellent performance in the UV and visible regions, including an extremely low dark current of ~1 nA at a bias of 20 V and a low noise equivalent of 10−13–10−15 W/Hz1/2. The maximum responsivity of the MoS2/SiC photodetector is 5.7 A/W with the incident light power of 4.35 μW at 365 nm (UV light). Furthermore, the maximum photoconductive gain, noise equivalent power, and normalized detectivity for the fabricated detector under 365 nm illumination are 79.8, 7.08 × 10−15 W/Hz1/2, and 3.07 × 1010 Jonesat, respectively. We thus demonstrate the possibility for integrating high-performance photodetectors array based on MoS2/SiC via direct chemical vapor growth.

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

scholarly journals 2D MoS2 Encapsulated Silicon Nanopillar Array with High-Performance Light Trapping Obtained by Direct CVD Process

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 267
Author(s):  
Minyu Bai ◽  
Zhuoman Wang ◽  
Jijie Zhao ◽  
Shuai Wen ◽  
Peiru Zhang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Performance ◽  
Low Cost ◽  
Light Trapping ◽  
Incident Light ◽  
Single Layer ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Planar Silicon ◽  
Shortwave Infrared

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development.

scholarly journals Photodetectors: Ultrathin SnSe2Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors (Adv. Mater. 48/2015)

2015 ◽  
Vol 27 (48) ◽  
pp. 8119-8119 ◽  
Author(s):  
Xing Zhou ◽  
Lin Gan ◽  
Wenming Tian ◽  
Qi Zhang ◽  
Shengye Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Sign in / Sign up

Export Citation Format

Share Document