photo detection
Recently Published Documents


TOTAL DOCUMENTS

138
(FIVE YEARS 52)

H-INDEX

14
(FIVE YEARS 5)

2021 ◽  
Vol 121 ◽  
pp. 111489
Author(s):  
Devarajan Alagarasan ◽  
S. Varadharajaperumal ◽  
K. Deva Arun Kumar ◽  
R. Naik ◽  
Sima Umrao ◽  
...  

2021 ◽  
Vol 9 ◽  
Author(s):  
Jingda Zhao ◽  
Xin Wang ◽  
Yuzhu Pan ◽  
Yubing Xu ◽  
Yuwei Li ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1352
Author(s):  
Chih-Chiang Wang ◽  
Fuh-Sheng Shieu ◽  
Han C. Shih

Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA–FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi2Se3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10−10 and 0.35 × 10−10 A and high Iphoto/Idark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10−2 and 6.6 × 10−2 s. Under UV light, (In,Sn)-dopedBi2Se3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi2Se3, indicating that (In,Sn)-doped Bi2Se3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi2Se3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi2Se3 has greater potential than undoped Bi2Se3 for use in UV and red-light photodetectors.


2021 ◽  
pp. 160460
Author(s):  
Jyotisman Bora ◽  
Santanu Podder ◽  
Deepshikha Gogoi ◽  
Bablu Basumatary ◽  
Arup R. Pal

Quantum ◽  
2021 ◽  
Vol 5 ◽  
pp. 447
Author(s):  
Zixin Huang ◽  
Peter P. Rohde ◽  
Dominic W. Berry ◽  
Pieter Kok ◽  
Jonathan P. Dowling ◽  
...  

Quantum data locking is a quantum phenomenon that allows us to encrypt a long message with a small secret key with information-theoretic security. This is in sharp contrast with classical information theory where, according to Shannon, the secret key needs to be at least as long as the message. Here we explore photonic architectures for quantum data locking, where information is encoded in multi-photon states and processed using multi-mode linear optics and photo-detection, with the goal of extending an initial secret key into a longer one. The secret key consumption depends on the number of modes and photons employed. In the no-collision limit, where the likelihood of photon bunching is suppressed, the key consumption is shown to be logarithmic in the dimensions of the system. Our protocol can be viewed as an application of the physics of Boson Sampling to quantum cryptography. Experimental realisations are challenging but feasible with state-of-the-art technology, as techniques recently used to demonstrate Boson Sampling can be adapted to our scheme (e.g., Phys. Rev. Lett. 123, 250503, 2019).


Sign in / Sign up

Export Citation Format

Share Document